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Semiconductor structure and forming method thereof

A semiconductor and isolation structure technology, applied in the field of semiconductor structure and its formation, can solve problems such as poor device performance, and achieve the effects of improved performance, simple processing technology, and reduced capacitance

Pending Publication Date: 2022-05-13
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

[0004] However, the performance of devices formed by existing semiconductor processes is not good

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0020] It can be seen from the background art that the performance of devices formed by existing semiconductor processes is not good. The reasons for the poor performance of a semiconductor structure are now analyzed in combination with a method for forming a semiconductor structure.

[0021] Please refer to Figure 1-Figure 4 , is a method of forming a semiconductor structure.

[0022] Such as figure 1 As shown, a substrate 100 is provided, the substrate includes a substrate 101, a dummy gate 107 located on the substrate, and an isolation opening 108 crossing the dummy gate 107;

[0023] Next, if figure 2 As shown, filling the isolation opening to form an isolation structure 104 isolating the dummy gate;

[0024] Next, refer to image 3 and Figure 4 , remove the dummy gate to form a gate dielectric layer 103 and a metal gate 102, the gate dielectric layer 103 conformally covers the sidewalls of the isolation structure 104 and the top and sidewalls of the fins 105; the...

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Abstract

The invention discloses a semiconductor structure and a forming method thereof, and the forming method comprises the steps: providing a substrate which comprises a substrate, a metal gate located on the substrate, and a first isolation structure which transversely cuts the metal gate, and a gate dielectric layer is formed between the first isolation structure and the metal gate; the first isolation structure at a first height is removed, a first isolation groove transversely cutting the metal gate is formed, and the gate dielectric layer located on the side wall of the first isolation groove is exposed by the first isolation groove; removing the gate dielectric layer on the side wall of the first isolation groove to form a second isolation groove; and forming a second isolation structure, wherein the second isolation groove is filled with the second isolation structure. The method not only can improve the device performance, but also is simple in process.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] In semiconductor manufacturing, with the development trend of ultra-large-scale integrated circuits, the feature size of integrated circuits continues to decrease, and the traditional gate dielectric layer continues to become thinner with the decrease in feature size, which increases the leakage of transistors, resulting in semiconductor devices. Power consumption is too high. [0003] In order to solve the above problems, in the prior art, the gate is formed by replacing the polysilicon gate with a metal gate. Among them, in the replacement gate process, the polysilicon dummy gate is formed first, and the corresponding device structure is further formed. After the corresponding device structure is formed, the polysilicon dummy gate is etched away to fo...

Claims

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Application Information

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IPC IPC(8): H01L21/8234H01L27/088
CPCH01L21/823437H01L21/823481H01L21/823431H01L27/0886
Inventor 韩秋华
Owner SEMICON MFG INT (SHANGHAI) CORP
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