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Transistor cell, transistor circuit, sub word line driver, and semiconductor device

A technology of transistor units and transistors, applied in the direction of transistors, semiconductor devices, circuits, etc., can solve problems such as speed delay

Pending Publication Date: 2022-05-17
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Speed ​​delay occurs when the word line voltage applied to the word line is supplied to more memory cells

Method used

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  • Transistor cell, transistor circuit, sub word line driver, and semiconductor device
  • Transistor cell, transistor circuit, sub word line driver, and semiconductor device
  • Transistor cell, transistor circuit, sub word line driver, and semiconductor device

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Embodiment Construction

[0021] Hereinafter, the present disclosure will be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings denote the same elements, and thus repeated explanation of the same elements is omitted.

[0022] Figure 1A and Figure 1B are a block diagram and a circuit diagram of a sub word line driver according to an embodiment, respectively.

[0023] refer to Figure 1A and Figure 1B , each of the sub-wordline drivers 200-1 (alternatively referred to as 'SWD1') and 200-2 (alternatively referred to as 'SWD2') according to the present embodiment may include three transistors. For example, the first sub-wordline driver 200-1 may include a first pull-up transistor PUT1, a first pull-down transistor PDT1, and a first transistor KT1, and the second sub-wordline driver 200-2 may include a second pull-up transistor PUT2. , the second pull-down transistor PDT2 and the second transistor KT2. It can be seen that ordinal numbers such ...

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PUM

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Abstract

The invention provides a transistor cell, a transistor circuit, a sub word line driver, and a semiconductor device. A transistor circuit having a common gate structure includes an active region and a gate. The active region has a body extending in a first direction on the substrate and a protrusion extending in a second direction perpendicular to the first direction from a center portion of the body in the first direction. A gate is disposed over the active region to overlap a channel region of the active region and has an inverted pi structure that surrounds but does not cover portions of the active region including two corner portions of the active region on three sides when viewed from a plan view. The protrusion is divided into a first portion and a second portion separated into two sub-portions by the separation region. Opposite ends of the body in the first direction correspond to the two drain regions, a second portion of the protrusion corresponds to the common source region, and the two drain regions, the common source region and the gate constitute two transistors, where the two transistors share the gate.

Description

[0001] This application is based upon and claims priority to Korean Patent Application No. 10-2020-0153077 filed with the Korean Intellectual Property Office on November 16, 2020, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] The inventive concept relates to a semiconductor memory device, and more particularly, to a transistor unit having a common gate structure and a sub-wordline driver and semiconductor device based on the transistor unit. Background technique [0003] The capacity and speed of semiconductor memory devices used in various electronic systems are rapidly increasing in accordance with user demands for high performance. Semiconductor memory devices can be broadly classified into volatile memory devices and nonvolatile memory devices. A representative example of a volatile memory device is a dynamic random access memory (DRAM), and a representative example of a nonvolatile memory device is a flash memory. ...

Claims

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Application Information

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IPC IPC(8): H01L27/108G11C11/408G11C11/4074
CPCG11C11/4085G11C11/4074H10B12/30H01L27/0207H10B12/50H01L29/42376G11C11/4094H01L29/1095H01L29/4238
Inventor 赵炳焄白寅硕丁贤玉黄汎傭
Owner SAMSUNG ELECTRONICS CO LTD