Temperature control of pluggable target seat for solid doped materials

Abstract

The invention discloses an ion source for accommodating a target seat of a solid doping material. The ion source includes a thermocouple disposed proximate the target seat to monitor a temperature of the solid doping material. In some embodiments, a controller uses this temperature information to alter one or more parameters of the ion source, such as arc voltage, cathode bias voltage, extracted beam current, or the location of the target seat within the arc chamber. Various embodiments are shown that show a connection between a controller and a thermocouple. In addition, embodiments are also presented that show various placement of the thermocouple on the target seat.

Description

technical field [0001] Embodiments of the present disclosure relate to an ion source, and more particularly to an ion source having a pluggable target mount for receiving a solid dopant material, wherein the temperature of the dopant material or the target mount can be measured and optionally controlled. Background technique [0002] Various types of ion sources are available for forming ions used in semiconductor processing equipment. For example, an indirectly heated cathode (IHC) ion source operates by supplying current to a filament disposed behind the cathode. The filament emits thermionic electrons, which accelerate toward and heat the cathode, which in turn causes the cathode to emit electrons into the arc chamber of the ion source. A cathode is provided at one end of the arc chamber. A repeller may be disposed at an end of the arc chamber opposite the cathode. The cathode and repeller can be biased to repel electrons, directing them back towards the center of the...

AI Technical Summary

Problems solved by technology

For example, dopant materials can become unstable and prone to runaway effects that can cause inconsistent beam performance and lead to undesired accumulation of dopant materials in the arc chamber

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