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Laser plasma extreme ultraviolet light source system and extreme ultraviolet light generating method thereof

A technology of laser plasma and extreme ultraviolet light source, which is applied in the field of semiconductors, can solve problems such as reflectivity decline and EUV collector pollution, and achieve the effects of reducing the generation of pollutants, reducing beam alignment procedures, and simplifying the structure

Pending Publication Date: 2022-05-20
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, during the process of generating plasma through the impact of two laser pulses, the EUV collector is seriously polluted and the reflectivity drops rapidly due to the collision of particles, ions, and radiation and the deposition of debris.

Method used

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  • Laser plasma extreme ultraviolet light source system and extreme ultraviolet light generating method thereof
  • Laser plasma extreme ultraviolet light source system and extreme ultraviolet light generating method thereof
  • Laser plasma extreme ultraviolet light source system and extreme ultraviolet light generating method thereof

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Embodiment Construction

[0023]Below, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. Further, in the following description, the description of the well-known structure and techniques is omitted to avoid unnecessarily confusing the concepts of the present disclosure.

[0024] Schematic diagrams of various structures according to the embodiments of the present disclosure are shown in the accompanying drawings. These diagrams are not drawn to scale, where certain details are magnified and some details may be omitted for the purpose of clear expression. The various regions shown in the figure, the shape of the layer and the relative size between them, the position relationship is only exemplary, in practice may be due to manufacturing tolerances or technical limitations and deviations, and those skilled in the ar...

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Abstract

The invention discloses a laser plasma extreme ultraviolet light source system and an extreme ultraviolet light generating method thereof. The system comprises a liquid drop generator, a liquid drop generator, an extreme ultraviolet light source and an extreme ultraviolet light source. The liquid drop generator is used for generating flat target liquid drops; the laser source is used for generating a laser pulse, so that the laser pulse impacts the target liquid drop to generate plasma; the collector is used for collecting EUV light rays radiated by the plasma and focusing and orienting the collected EUV light rays into the scanner. The flat target liquid drop is directly generated through the liquid drop generator, so that the plasma can be generated by only using one laser pulse to impact the target liquid drop, and the number of times of impacting the liquid drop by the laser pulse is reduced, so that the generation of pollutants can be reduced, the severity of pollution of the collector is further reduced, and the service life of the collector is prolonged. Besides, the laser source only needs to generate one laser pulse, and does not need to generate two laser pulses, so that the structure of the laser source can be simplified, and the light beam alignment procedure of the laser source is reduced.

Description

Technical field [0001] The present application relates to the field of semiconductor technology, specifically to a laser plasma polar ultraviolet light source system and a method for generating extreme ultraviolet light. Background [0002] At present, the commonly used ultraviolet (EUV) light source mainly has three types: laser plasma (LPP) light source, gas discharge plasma (DPP) light source and synchrotron radiation light source. [0003] Among them, the working principle of the laser plasma (LPP) light source is the circular droplet flowing from the droplet generator, which is first struck by the front pulse laser into a flat droplet, and then hit by the main pulse laser to generate plasma radiation EUV light, and the EUV light is reflected and focused by the EUV collector and is directed to the middle focus unit and enters the EUV scanner. [0004] However, during the plasma generation process of the droplets after two laser pulses, due to the collision of particles, ions,...

Claims

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/70033
Inventor 金成昱金帅炯梁贤石贺晓彬杨涛丁明正刘强
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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