Data processing method and device suitable for piezoelectric resonator

Abstract

The invention provides a data processing method and device suitable for a piezoelectric resonator, and the method comprises the steps: storing standard design data actively configured by a user, and adding corresponding design attribute information to the standard design data; based on the received transverse mode suppression coefficient, adjusting the standard design data to generate corresponding adjustment design data; comparing the adjustment design data with standard design data to obtain design change information; obtaining a standard compensation function in the design attribute information, and determining an adjustment compensation function corresponding to the adjustment design data according to the design change information and the standard compensation function; updating a pre-stored design information mapping table according to the adjustment design data and the adjustment compensation function, and establishing a corresponding storage unit in a database based on the updated design information mapping table; and storing the adjustment design data and the adjustment compensation function in a newly established storage unit of a database.

Description

technical field [0001] The invention relates to the fields of data processing and semiconductor technology, in particular to a data processing method and device suitable for piezoelectric resonators. Background technique [0002] With the rapid development of 5G communication technology, people have higher and higher requirements for the performance indicators of high-frequency filter devices, especially in the field of mobile phone radio frequency terminals, the use of filters has increased significantly, and resonators are used as surface acoustic wave filters. The core, its frequency, electromechanical coupling coefficient and Q value and other parameters all play a key role in the performance of the filter. [0003] In recent years, research on resonators has enabled resonators to have high frequency, high electromechanical coupling coefficient and high Q value (quality factor), and resonators based on silicon substrates are easier to integrate with other devices into sm...

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Problems solved by technology

[0006] In the above-mentioned Chinese patent application, since the metallization ratio of the fake finger region and the excitation region are the same in each cycle, it cannot achieve the suppression effect desired by the user during the transverse mode suppression process, so There is an urgent need for a data processing method based on interdigital parameters of resonators with high transverse mode suppression effect

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