A semiconductor device, its manufacturing method, and a high-precision over-temperature protection circuit
A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of easy aging, poor stability and poor interchangeability of components, and achieve excellent reliability, high integration, Sensitive effect
Active Publication Date: 2022-06-28
NANJING HRM SEMICON CO LTD
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Problems solved by technology
[0004] The practical application of NTC negative temperature coefficient thermistor mainly has the following disadvantages: 1) The relationship between resistance and temperature is seriously nonlinear, which is not conducive to OTP or PWM module detection or control IC design; 2) The consistency and interchangeability of components are poor, Lead to poor over-temperature protection effect or early entry into the over-temperature protection program; 3) Components are prone to aging, poor stability, over-temperature protection function failure or poor application reliability of the whole machine
Method used
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[0044] The present invention is further illustrated below in conjunction with the accompanying drawings and specific embodiments. The present embodiment is implemented on the premise of the technical solution of the present invention. It should be understood that these embodiments are only used to illustrate the present invention and not to limit the scope of the present invention.
[0045] like Figures 1 to 7 As shown, an embodiment of the present invention provides a method for fabricating a semiconductor device, including:
[0046] see figure 1 , a substrate 1 of the first conductivity type is provided, and an epitaxial layer 2 is formed on the upper side of the substrate 1 . In the following, the first conductivity type is N-type and the second conductivity type is P-type as an example for specific description.
[0047] see figure 2and the epitaxial layer is divided into a terminal region, a main MOS cell region, a diode region and an isolation region disposed between...
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Abstract
The invention discloses a semiconductor device, a manufacturing method thereof, and a high-precision over-temperature protection circuit. The method includes making an epitaxial layer on the upper side of the substrate; dividing the epitaxial layer into a terminal area, a main MOS cell area, a diode area, and an area between the main MOS cell area and the diode area through a Ring injection operation and a Ring push well operation. between the isolation region; the main MOS cell region and the diode region that are not blocked by polysilicon are sequentially implanted with elements of the second conductivity type and annealed, so as to make the anode of the diode in the diode region, and the anode of the diode and the lower The epitaxial layer on the side cooperates with the substrate to form a diode structure. The invention can make the monitoring accuracy of over-temperature protection higher, and customers can carry out customized design according to their own needs; it can make the sensitivity of over-temperature protection higher; the reliability of over-temperature protection monitoring circuit is better; the integration degree is higher and the cost is lower , more suitable for the development direction of light weight and miniaturization.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a method for manufacturing the same, and a high-precision over-temperature protection circuit. Background technique [0002] Existing adapters generate heat during operation due to energy conversion and other reasons, and if the temperature is too high, abnormal operation or failure may occur. In order to protect the normal operation of the adapter and its internal electronic components from damage, it is necessary to carry out over-temperature protection for the circuit, OTP (Over-Temperature Protection) Block. Over-temperature protection means that the corresponding protection function is activated when the temperature exceeds a certain threshold. [0003] In the OTP Block design of common lines, NTC (Negative Temperature Coefficient thermistor) is often used. As the temperature increases, the resistance of the NTC decreases. The OTP Block det...
Claims
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IPC IPC(8): H01L21/265H01L21/324H01L21/8234H01L27/06
CPCH01L21/265H01L21/324H01L21/8234H01L27/0629
Inventor 何军胡兴正薛璐刘海波
Owner NANJING HRM SEMICON CO LTD