Semiconductor device
A semiconductor and transistor technology, applied in the field of semiconductor devices, can solve problems such as thermal runaway and temperature rise
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no. 1 example
[0032] refer to Figures 1 to 4D The accompanying drawings describe the semiconductor device of the first embodiment.
[0033] figure 1 It is a diagram showing the positional relationship of electrodes and wirings in a plan view of the semiconductor device according to the first embodiment. On one surface (hereinafter referred to as an upper surface) of a first member such as a semiconductor substrate, a plurality of transistors 20 having substantially the same characteristics are arranged in one direction. Each of the plurality of transistors 20 is, for example, a heterojunction bipolar transistor (HBT), and the plurality of transistors 20 are connected in parallel to each other. A structure in which a plurality of transistors having substantially the same characteristics are connected in parallel is called a multi-cell structure.
[0034] A passive element 25 is arranged between two adjacent transistors 20 . Each passive element 25 is electrically connected to one of the...
no. 2 example
[0080] Next, refer to Figure 5 , Figure 6A as well as Figure 6B , the semiconductor device of the second embodiment will be described. Below, for and reference Figures 1 to 4D The description of the structure common to the semiconductor device of the first embodiment described in the drawings is omitted.
[0081] Figure 5 It is a diagram showing the positional relationship of electrodes and wiring in a plan view of the semiconductor device according to the second embodiment. In the first embodiment, the passive element 25 ( figure 1 ) includes the input capacitor Cin and the ballast resistance element Rb, but in the second embodiment, the passive element 25 includes the emitter-base capacitor Ceb.
[0082] An electrode 32EB included in the second wiring layer is arranged between the two transistors 20 . The first-layer base wiring 31B extends to a region overlapping with the electrode 32EB in plan view. An emitter-base capacitor Ceb is formed in a region where the...
no. 3 example
[0096] Next, refer to Figure 7 , Figure 8A as well as Figure 8B , the semiconductor device of the third embodiment will be described. Below, for and reference Figure 5 , Figure 6A as well as Figure 6B The description of the structure common to the semiconductor device of the second embodiment described will be omitted.
[0097] Figure 7 It is a diagram showing the positional relationship of electrodes and wiring in a plan view of the semiconductor device according to the third embodiment. In the second embodiment, the passive element 25 ( Figure 5 ) includes an emitter-base capacitor Ceb, but in the third embodiment, the passive element 25 includes a base-collector capacitor Cbc and a base-collector resistance element Rbc.
[0098] The base-collector capacitor Cbc includes a lower electrode 31BC included in the first wiring layer, an upper electrode 32BC included in the second wiring layer, and a second interlayer insulating film 42 disposed therebetween. ( ...
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