Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of mesa of optoelectronic device and etching structure of mesa type optoelectronic device

An optoelectronic device and mesa-type technology, applied in the field of infrared detectors, can solve the problems of inconsistent etching depth of imaging elements, reduction of effective area affecting the final performance of the product, lateral corrosion of the etching area, etc.

Pending Publication Date: 2022-05-24
浙江拓感科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that in the prior art during the preparation of superlattice infrared focal plane arrays, the etching depths of the small spacing between imaging elements and the large spacing between chips are likely to be inconsistent when using dry etching after one pass of photolithography. Problems, or the use of wet etching tends to cause serious lateral corrosion in the etched area, reducing the effective area of ​​the mesa unit and affecting the final performance of the product. Provide a method for preparing an optoelectronic device mesa and etching of a mesa optoelectronic device structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of mesa of optoelectronic device and etching structure of mesa type optoelectronic device
  • Preparation method of mesa of optoelectronic device and etching structure of mesa type optoelectronic device
  • Preparation method of mesa of optoelectronic device and etching structure of mesa type optoelectronic device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0027] The invention provides a preparation method of an optoelectronic device mesa and an etching structure of the mesa-type optoelectronic device. In the preparation method of the optoelectronic device mesa of the present invention, when the etching spacing of different etching regions in the etching structure of the electronic device mesa is different, the etching load structure 2 is added in the large spacing etching region 8 with a large etching spacing, The large etching spacing is separated into at least two sub-etching regions 7 by the etching load structure, and the width A of the sub-etching regions 7 is equal to or close to the small etching spacing H between the mesa lithography units 1 with small etching spacing , in this way, in different regions, the distance between the mesa lithography units, the distance between the mesa lithography unit and the etching load structure is equal to or close to the small etching distance H, thereby eliminating the etching distanc...

Embodiment 1

[0030] like Figure 1 to Figure 5 As shown, for the sake of simplicity, a 3×3 pixel array in the active area of ​​the chip is taken as an example, and the distance D between adjacent chips 5 is greater than 5um. like figure 1 and figure 2 As shown, firstly, photolithography is performed on the superlattice material wafer 3, wherein the distance H between the pixels of the pixel array is 2um, and the photolithography is performed simultaneously between two adjacent dies as the etching load structure 2. Load pattern array, the graphics unit 6 in the load pattern array is a long strip of 1umx2um, when the lithography load pattern is composed of multi-column and / or multi-row graphics units 6, the adjacent graphics unit spacing A and pixel 1 The spacing H is equal to 2um, the spacing A between the graphic unit 6 and the adjacent pixel is consistent with the spacing H between the pixels, which is also 2um, and the width B of the graphic unit is less than or equal to the wet hair ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for preparing a mesa of a photoelectronic device and an etching structure of a mesa type photoelectronic device, aiming at solving the problem that in the prior art, in the preparation process of a superlattice infrared focal plane array, dry etching is adopted after primary photoetching, so that the etching depths of small spacing between imaging elements and large spacing between chips are easily inconsistent. The preparation method comprises the steps that an etching load structure is arranged in a large-spacing etching area, the large-spacing etching area is divided into at least two sub-etching areas through the etching load structure, the etching structure comprises a large-spacing etching area and a small-spacing etching area, the etching load structure is arranged in the large-spacing etching area, and the small-spacing etching area is arranged in the small-spacing etching area. By adopting the preparation method of the table top of the optoelectronic device and the etching structure of the table top type optoelectronic device provided by the invention, the photoetching times are reduced, the process complexity is reduced, and the size precision of the obtained table top of the optoelectronic device is consistent with that of the table top of the optoelectronic device obtained by adopting two etching processes.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to a preparation method of an optoelectronic device mesa and an etching structure of a mesa optoelectronic device. Background technique [0002] For mesa-type optoelectronic devices, the device mesa is generally prepared by an etching process, and P-type and N-type contact metals are respectively prepared on the top and bottom of the mesa to complete the device fabrication. In the actual product structure design, the size of the etching area is often inconsistent. For example, in order to improve the quantum efficiency of the device, the etching distance between two adjacent mesa units in the active area of ​​the chip is usually smaller. Well, generally controlled at 2-3um. However, between two adjacent chip dies on the same epitaxial wafer, there is often a region with an etching spacing greater than 5um. Or on the same chip, due to different patterns, the etching spac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18H01L23/544H01L31/0236
CPCH01L31/18H01L23/544H01L31/02363Y02P70/50
Inventor 刘志方
Owner 浙江拓感科技有限公司