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Double-layer transition metal chalcogenide continuous film and preparation method thereof

A transition metal chalcogenide, continuous film technology, applied in chemical instruments and methods, metal material coating technology, sustainable manufacturing/processing, etc., can solve the lack of thickness controllability and excessive area of ​​double-layer transition metal chalcogenides Small and other problems, to achieve the effect of strong designability, high repeatability, and uniform thickness

Active Publication Date: 2022-05-27
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Purpose of the invention: The present invention provides a continuous Covered double-layer transition metal chalcogenide continuous film; also provided is the preparation method of the above-mentioned double-layer transition metal chalcogenide continuous film

Method used

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  • Double-layer transition metal chalcogenide continuous film and preparation method thereof
  • Double-layer transition metal chalcogenide continuous film and preparation method thereof
  • Double-layer transition metal chalcogenide continuous film and preparation method thereof

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Effect test

Embodiment 1

[0028] The sulfur powder (S), metal molybdenum (Mo), and sapphire (C surface, with a certain chamfer angle, annealed in air) substrates were placed in the first, second, and third temperature zones of the three-temperature zone CVD system, respectively. The vacuum was evacuated to below 10 Pa, and 100 standard milliliters per minute (sccm) of Ar was introduced. The substrate is heated to 1000-1050°C, then S is heated to 180-200°C to melt, and Mo is heated to 650-850°C, and 5-10sccm of oxygen is introduced. Oxygen was turned off after 10 min of reaction. The substrate was cooled to 200-300 °C in an Ar and S atmosphere, and the S heating device was turned off. Continue to cool down to room temperature and remove the sample.

[0029] Its optical micrographs such as figure 1 , it can be seen that double-layer MoS with uniform thickness can be obtained by using the steps of the present invention 2 Triangular grains.

[0030] like figure 2 , MoS grown on sapphire using atomic...

Embodiment 2

[0033] Put sulfur powder (S), metal molybdenum (Mo), and a sapphire substrate with a length and width of about 2 cm (C surface, with a certain chamfer angle, annealed in air) into the first, second, and third temperature zones of the CVD system, respectively. Three temperature zones. The vacuum was evacuated to below 10 Pa, and 100 standard milliliters per minute (sccm) of Ar was introduced. The substrate was heated to 1050-1080°C, then S was heated to 180-200°C to melt it, and Mo was heated to 650-850°C, and 5-10sccm of oxygen was introduced. Oxygen was turned off after 30 min of reaction. The substrate was cooled to 200-300 °C in an Ar and S atmosphere, and the S heating device was turned off. Then continue to cool down to room temperature, take out the sample, and obtain continuously covered MoS 2 Double layer continuous film.

[0034] The double layer MoS prepared by the present invention 2 It can reach the order of centimeters, and the real photos of 2cm double-layer...

Embodiment 3

[0036]Put sulfur powder (S), metal molybdenum (Mo), and sapphire substrate (C surface, with a certain chamfer angle, annealed in air) into the first, second, and third temperature zones of the three-temperature zone CVD system, respectively. The vacuum was evacuated to below 10 Pa, and 100 standard milliliters per minute (sccm) of Ar was introduced. The substrate was heated to 1000°C, then S was heated to 180-200°C to melt it, and Mo was heated to 650-850°C, and 5-10 sccm of oxygen was introduced. Oxygen was turned off after 40 min of reaction. The substrate was cooled to 200-300 °C in an Ar and S atmosphere, and the S heating device was turned off. Then continue to cool down to room temperature, take out the sample, and observe the MoS 2 After the monolayer growth is continuous, a bilayer grain is grown on top in a layer-by-layer manner.

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Abstract

The invention discloses a double-layer transition metal chalcogenide continuous film and a preparation method thereof.The double-layer transition metal chalcogenide continuous film is composed of a substrate and substrate surface nucleation double-layer crystal grains, the double-layer crystal grains are evenly formed at the high step of the substrate and continuously cover the high step, the two layers are consistent in size, and the edges of the two layers are aligned; the transition metal chalcogenide is molybdenum disulfide, tungsten disulfide, molybdenum diselenide or tungsten diselenide; the preparation method of the continuous thin film is a vapor deposition method, double-layer crystal grains are nucleated on the surface of a substrate, and the upper layer and the lower layer of the double-layer crystal grains are aligned, grow at a constant speed and are spliced into a uniform and continuous double-layer thin film; the continuous film can reach the centimeter level, and completely meets the requirements of high-performance electronic device integration.

Description

technical field [0001] The invention relates to a double-layer transition metal chalcogenide compound continuous film, and also relates to a preparation method of the compound continuous film. Background technique [0002] With the development of Moore's Law, traditional silicon-based materials have been unable to meet the goal of smaller size and higher performance of transistors. Two-dimensional semiconductor materials, due to their atomic-level thickness, have no dangling bonds on the surface, and still have a few layers of thickness. Strong gate control capability makes it a material with great potential for future device development. Transition metal dichalcogenides (TMDCs) are important two-dimensional semiconductors. Due to their excellent properties, such as high on-off ratio, mobility, etc., TMDCs have great advantages in the field of electronic devices and integration. The preparation of large-area monolayer TMDCs has further promoted the development of transition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B25/02
CPCC30B29/46C30B25/02C23C16/305C23C16/448C30B29/48C30B25/16C23C16/0209C23C16/52
Inventor 王欣然刘蕾李涛涛施毅
Owner NANJING UNIV
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