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LED chip and manufacturing method thereof

An LED chip and epitaxy technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as current congestion, and achieve the effects of facilitating production, enhancing reliability, and inhibiting electrochemical hydrolysis

Pending Publication Date: 2022-05-27
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. Due to the existence of edges and corners in this area and it is the closest to the P electrode, when the reverse pressure is applied, the electric field carried by its unit area is larger than other areas, so it is easy to cause current congestion;

Method used

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  • LED chip and manufacturing method thereof
  • LED chip and manufacturing method thereof
  • LED chip and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0043] In order to make the content of the present invention clearer, the content of the present invention will be further described below with reference to the accompanying drawings. The present invention is not limited to this specific embodiment. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0044] like image 3 As shown, an LED chip includes:

[0045] substrate 1;

[0046] An epitaxial stack L disposed on the surface of the substrate 1, the epitaxial stack L includes a first-type semiconductor layer 2, an active region 3 and a second-type semiconductor layer 4 stacked in sequence along a first direction, and a part of the epitaxial stack L The region is etched to a part of the first type semiconductor layer 2 to form a groove L1 and a light-emitting mesa L2, wherein the light-emitting mesa L2 has edges and ...

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PUM

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Abstract

The invention provides an LED chip and a preparation method thereof, a second electrode is stacked on a part of the surface of a light-emitting table top, and in the light-emitting table top, an area formed by the second electrode and an edge angle with the shortest distance from the second electrode is a high current density area; a transparent conductive layer is constructed on the surface of the light-emitting table surface except the strong current density area. Therefore, the electric field of the strong current density region is effectively reduced, the electrochemical hydrolysis of the epitaxial laminated layer in the region is inhibited, and in long-term application, reverse electrode falling and chip short circuit are greatly reduced, the stability of the chip in a reverse bias state is improved, and the reliability of the chip is enhanced.

Description

technical field [0001] The invention relates to the field of light emitting diodes, in particular to an LED chip and a preparation method thereof. Background technique [0002] With the rapid development of LED technology and the gradual improvement of LED light efficiency, the application of LED is becoming more and more extensive, and people are paying more and more attention to the development prospects of LED in display screens. LED chip, as the core component of LED lamp, its function is to convert electrical energy into light energy, specifically, including epitaxial wafer and N-type electrode and P-type electrode respectively arranged on the epitaxial wafer. The epitaxial wafer includes a P-type semiconductor layer, an N-type semiconductor layer, and an active layer located between the N-type semiconductor layer and the P-type semiconductor layer. When a current passes through the LED chip, holes in the P-type semiconductor and The electrons in the N-type semiconduct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/36H01L33/38H01L33/00
CPCH01L33/36H01L33/38H01L33/005H01L2933/0016
Inventor 王锐周弘毅颜姗姗
Owner XIAMEN CHANGELIGHT CO LTD