LED chip and manufacturing method thereof

Abstract

The invention provides an LED chip and a preparation method thereof, a second electrode is stacked on a part of the surface of a light-emitting table top, and in the light-emitting table top, an area formed by the second electrode and an edge angle with the shortest distance from the second electrode is a high current density area; a transparent conductive layer is constructed on the surface of the light-emitting table surface except the strong current density area. Therefore, the electric field of the strong current density region is effectively reduced, the electrochemical hydrolysis of the epitaxial laminated layer in the region is inhibited, and in long-term application, reverse electrode falling and chip short circuit are greatly reduced, the stability of the chip in a reverse bias state is improved, and the reliability of the chip is enhanced.

Description

technical field [0001] The invention relates to the field of light emitting diodes, in particular to an LED chip and a preparation method thereof. Background technique [0002] With the rapid development of LED technology and the gradual improvement of LED light efficiency, the application of LED is becoming more and more extensive, and people are paying more and more attention to the development prospects of LED in display screens. LED chip, as the core component of LED lamp, its function is to convert electrical energy into light energy, specifically, including epitaxial wafer and N-type electrode and P-type electrode respectively arranged on the epitaxial wafer. The epitaxial wafer includes a P-type semiconductor layer, an N-type semiconductor layer, and an active layer located between the N-type semiconductor layer and the P-type semiconductor layer. When a current passes through the LED chip, holes in the P-type semiconductor and The electrons in the N-type semiconduct...

AI Technical Summary

Problems solved by technology

[0004] 1. Due to the existence of edges and corners in this area and it is the closest to the P electrode, when the reverse pressure is applied, the electric field carried by its unit area is larger than other areas, so it is easy to cause current congestion;

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