Exposure dose control method based on exposure dose control system

A technology of exposure dose and control system, which is applied in the field of photolithography, can solve the problems of low precision of exposure dose control, achieve the effect of improving precision and solving low precision

Pending Publication Date: 2022-06-03
BEIJING SEMICON EQUIP INST THE 45TH RES INST OF CETC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the purpose of this application is to provide an exposure dose control method, device, electronic equipment and storage medium based on an exposure dose control system to solve the problem of low exposure dose control accuracy

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  • Exposure dose control method based on exposure dose control system
  • Exposure dose control method based on exposure dose control system
  • Exposure dose control method based on exposure dose control system

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Embodiment Construction

[0047]In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only It is a part of the embodiments of the present application, but not all of the embodiments. The components of the embodiments of the present application generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations. Thus, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the application as claimed, but is merely representative of selected embodiments of the application. Based on the embodiments of the present application, every other embodiment obtained...

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Abstract

The invention provides an exposure dose control method based on an exposure dose control system. The method comprises the following steps: controlling a shutter to open; receiving an energy value collected by an energy sensor, and determining an accumulated exposure dose value based on the energy value; determining whether the accumulated exposure dose value is not less than a target dose value; if the accumulated exposure dose value is not less than the target dose value, controlling the shutter to start to close; taking the accumulated exposure dose value corresponding to the jitter delay ending moment after the shutter is completely closed as an actual accumulated exposure dose value; determining an exposure dose error value based on the actual accumulated exposure dose value; determining whether the exposure dose error value meets requirements or not; if the exposure dose error value does not meet the requirement, updating the equivalent dose value, and returning to execute the first step; and if the exposure dose error value meets the requirement, applying the equivalent dose value to the exposure system. Through the exposure dose control method based on the exposure dose control system, the problem of low exposure dose control precision is solved.

Description

technical field [0001] The present application relates to the technical field of lithography, and in particular, to an exposure dose control method based on an exposure dose control system. Background technique [0002] The lithography process technology is a key process link in the semiconductor production process. The process flow of lithography technology is generally divided into silicon wafer pretreatment, gluing, pre-baking, exposure, development, post-baking, etching, degumming and overetching. It is a relatively complex process, and each process link affects and restricts each other. Among them, exposure is a key link that affects whether the product is qualified or not. It refers to the use of a specific wavelength and intensity of broadcasting to irradiate the photoresist through the mask, so that the photoresist in the irradiated part undergoes a photochemical reaction. corresponding graphics on the membrane. [0003] The exposure dose is the product of the ligh...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70558
Inventor 刘玉倩张炳寅张利云高繁星
Owner BEIJING SEMICON EQUIP INST THE 45TH RES INST OF CETC
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