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Atomic layer thermopile heat flow sensor and batch preparation method thereof

A heat flow sensor and thermopile technology, which is applied in the manufacture/processing of thermoelectric devices, thermoelectric device parts, calorimeters, etc., can solve problems such as unfavorable device miniaturization, and achieve simple design ideas and measurement points small, efficiency-enhancing effect

Pending Publication Date: 2022-06-17
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] And in the application scenario of large thermal flow field measurement requirements, the industry often adopts the physical amplification mode of the thermopile line superposition structure to improve the sensitivity of the

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  • Atomic layer thermopile heat flow sensor and batch preparation method thereof
  • Atomic layer thermopile heat flow sensor and batch preparation method thereof
  • Atomic layer thermopile heat flow sensor and batch preparation method thereof

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[0038]实施例：

[0039]步骤1、通过直流磁控溅射外延生长YBCO薄膜。

[0040]将两英寸倾斜LAO单晶基片进行清洗，清洗完成后将基片装入沉积腔体中，真空抽至2×10-3Pa后开始沉积实验。首先调节加热温度至830℃，氧分压10Pa，氩分压20Pa，溅射电流0.5A，沉积5个小时，此速率下厚度为250nm。沉积完成后，关溅射同时将温度降至450℃，充氧到腔体至气压为1×105Pa，退火45分钟。

[0041]步骤2、采用第一次光刻将YBCO薄膜进行图形化。

[0042]首先进行正性光刻胶涂胶，将样品放在匀胶机上，设置转速和时间，使得光刻胶均匀分布在两英寸基底上。然后将带有光刻胶的片子放在加热台进行烘烤，即100℃下烘烤65s，提高样品和光刻胶之间的黏附性。进行接触式曝光3.2s。将样品浸入显影液中20s，洗去被曝光的部分光刻胶，随后对样品进行清洗。

[0043]步骤3、利用离子束刻蚀机对样品进行刻蚀，使得表面没有光刻胶保护的图形被移除。刻蚀速率约为10nm / min，且不能连续长时间进行刻蚀实验，否则温度过高容易使光刻胶变性，后续除胶极为不易。完成刻蚀后用丙酮清洗掉多余光刻胶，形成均匀铺满整单晶基底的YBCO线条。

[0044]步骤4、采用第二次光刻工艺和直流磁控溅射实现金属层的图形制备。

[0045]首先进行负性光刻胶旋涂，时间和转速和旋涂正胶时一样，均为1000r / s运行10s，3000r / s运行30s，使光刻胶均匀旋涂在薄膜表面；将基片放置在100℃的加热台上前烘65s，提高光刻胶与样品表面的黏附性。使用掩模版进行接触式曝光3.2s，随后将基片放置在120℃的加热台烘烤90s，再泛曝光45s，将样品浸入显影液，并轻轻晃动以溶解未曝光部分光刻胶，并进行清洗和烘干。

[0046]将样品放入直流磁控溅射镀金设备腔体中，真空抽至7×10-4Pa以下，开始溅射实验。首先充氩气至1.2×10-2Pa，开始进行钛过渡层的沉积。钛靶溅射电流设置为80mA，速率为10nm / min。然后进行金导电层沉积，金靶溅射电流设置为100mA，速率为60nm / min。由于薄膜厚度为250nm，所以只需要沉积钛2min、沉积金4min即可。最后使用丙酮去除基片表面剩余的光刻胶。

[0047]步骤5、在两英寸样品上，批量制备上千个小型ALTP热流传感器件，需要利用划片机进行切样。首先对制作好的样...

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Abstract

The invention belongs to the field of heat flow sensors, and particularly relates to an atomic layer thermopile heat flow sensor and a batch preparation method thereof. The atomic layer thermopile heat flow sensor provided by the invention is good in stability; the design thought of the batch preparation technology is simple and easy to implement, thousands of small ALTP heat flux sensors can be produced in batches at a time on an inclined single crystal substrate with a large area of more than one inch through special graphical structural design, industrial mass production is facilitated, the working efficiency is greatly improved, and the cost is reduced. Meanwhile, array samples containing functional layer lines of 2m, nm and the like can be cut, so that different numbers of samples can be selected for testing according to different requirements during testing, a measurement requirement application scene of a large heat flow field can be effectively dealt with, an integrated sensor chip module can be conveniently formed, and the characteristic that a microsystem can be subjected to standardized batch production is fully exerted; and the circuit development rule in the current era is met.

Description

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Claims

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Application Information

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IPC IPC(8): H01L35/32H01L35/34H01L35/10G01J5/12G01K17/00G01M9/06
CPCG01J5/12G01K17/003G01M9/06H10N10/82H10N10/01H10N10/17Y02P70/50
Inventor 陶伯万常永涛赵睿鹏费希陈曦李禛哲
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA