Power amplification device and semiconductor die

Abstract

The invention relates to a power amplifier device and a semiconductor die. In particular, the invention relates to a power amplification device operable at a radio frequency, RF, frequency, more particularly in a frequency range between 100 MHz and 40 GHz. A power amplification device of the present invention includes a semiconductor die on which a power transistor is integrated. The semiconductor die includes a shunt network including a plurality of first bonding wires arranged in series with a first capacitor arranged proximate the input side of the power transistor. The shunt network is configured to call out an output capacitance of the power transistor. In accordance with the transistor, a power amplification device includes a pair of coupling lines on a semiconductor die, where a first line of the pair of coupling lines is connected in series with an input of the power transistor, and where a second line of the pair of coupling lines is contained in a shunt network and is connected in series with a plurality of first bonding lines and a first capacitor.

Description

technical field [0001] The present invention relates to a power amplifier device and a semiconductor bare chip. The invention relates in particular to a power amplification device operable at radio frequency (RF) frequencies, more particularly in the frequency range between 100 MHz and 40 GHz. More particularly, the present invention relates to a power amplifying device comprising one or more laterally diffused metal-oxide-semiconductor (LDMOS) transistors as power transistors with an output power level of 20 W or higher, although this The invention is also applicable to other transistor technologies such as Gallium Nitride Field Effect Transistors. Background technique [0002] Figure 1A and 1B An exemplary power amplification device 200 known from WO2006097893A2 is shown. Figure 1A The cross-sectional view of FIG. 1 shows a conductive substrate 201 on which an active semiconductor die 202 and a passive semiconductor die 203 are mounted. The power amplification device ...

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Problems solved by technology

[0008] The applicant has found that although the solution provided by WO2006097893A2 is beneficial in some applications, it cannot sufficiently alleviate the feedback capacitance in current and future applications, especially for LDMOS operating above 1GHz with a power level of 100W device

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