Gallium arsenide power supply modulation circuit
A power modulation circuit, gallium arsenide technology, applied in circuit devices, emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, etc. GaN circuit integration, system complexity and other issues, to reduce the number of gold wires, reduce the difficulty of processing and testing, and improve system reliability
Pending Publication Date: 2022-06-21
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Problems solved by technology
Commonly used power modulation circuits are designed based on silicon technology, which cannot be integrated with gallium arsenide circuits on the same chip, resulting in an increase in the number, volume, and weight of chips in the system, and complicating the use of the system
However, due to its own process characteristics, the gallium arsenide process cannot be designed by the method of silicon power modulation.
Method used
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[0019] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, but not to be construed as a limitation of the present invention.
[0020] The dual-channel gallium arsenide power modulation circuit in this embodiment has a single-channel circuit structure block diagram as shown in figure 1 As shown, the entire circuit includes an anti-static protection circuit, a level conversion circuit, a switch control circuit and an output buffer circuit. The signal first passes through the anti-static protection circuit, and the level conversion circuit realizes the control level matching of the rear-stage switch, and the switch con...
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The invention discloses a gallium arsenide power supply modulation circuit, which is designed by adopting a gallium arsenide process and comprises an electrostatic protection circuit, a level conversion circuit, a switch control circuit and an output buffer circuit. Signals firstly pass through the anti-static protection circuit, control level matching of a driving post-stage switch is achieved through the level conversion circuit, and the switch control circuit achieves level control over power source modulation signals output by the output buffer circuit. The gallium arsenide power supply modulation circuit provided by the invention is convenient to integrate with a gallium arsenide chip, and has the characteristics that the cost and the system complexity are reduced, and the system reliability is improved.
Description
technical field [0001] The invention relates to a power supply modulation circuit, in particular to a gallium arsenide power supply modulation circuit, which belongs to the field of radio frequency microwave integrated circuits of microelectronics and solid electronics. Background technique [0002] With the development of wireless communication technology, power modulation technology is widely used in time-division communication, radar and other technologies. In order to reduce the static power consumption of the overall system, the power of some circuits can be turned on only when they need to work, and kept off at other times. However, the control signal itself does not have sufficient load capacity, and the existing solution is to use a power modulation chip to control the power distribution of the circuit. [0003] The existing power modulation chip adopts a silicon chip design technology, and uses a silicon chip and a compound chip to connect to perform power modulati...
Claims
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Login to View More IPC IPC(8): H02M3/156H02H9/02H02H9/04
CPCH02M3/156H02H9/02H02H9/04
Inventor 邹文静潘晓枫阮启恒林瑞凌显宝刘飞
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD