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Super-junction RC-IGBT device structure

A device structure and isolation area technology, applied in semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as unfavorable parallel use, unstable device performance, voltage foldback, etc., to improve system integration, ensure short-circuit capability, The effect of reducing the saturation pressure drop

Pending Publication Date: 2022-06-24
上海埃积半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the RC-IGBT is converted from unipolar mode to bipolar mode, the output current voltage curve will have a voltage snapback phenomenon (snapback), resulting in unstable performance of the device and not conducive to parallel use

Method used

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  • Super-junction RC-IGBT device structure
  • Super-junction RC-IGBT device structure
  • Super-junction RC-IGBT device structure

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Embodiment Construction

[0039] In the following description, for the purpose of illustration rather than limitation, specific details such as a specific system structure and technology are set forth in order to provide a thorough understanding of the embodiments of the present application. However, it will be apparent to those skilled in the art that the present application may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of hierarchy and block structures in well-known IGBT devices are omitted so as not to obscure the description of the present application with unnecessary details.

[0040] It is to be understood that, when used in this specification and the appended claims, the term "comprising" indicates the presence of the described feature, integer, step, operation, element and / or component, but does not exclude one or more other The presence or addition of features, integers, steps, operations, elements, components and / or collections...

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Abstract

The super-junction RC-IGBT device structure comprises an IGBT region, a first isolation region, an FRD region and a second isolation region which are transversely and sequentially arranged, and each of the four regions internally comprises a front metal layer, a back metal layer, an insulating dielectric layer, a groove located below the insulating dielectric layer and a Pwell region located between the adjacent grooves; in the IGBT region, a collector P + region, an N-type FS buffer region and a first N-base region are sequentially arranged between the Pwell region and the back metal layer from bottom to top; in the FRD region, an anode N + region and a second N-base region are sequentially arranged between the Pwell region and the back metal layer from bottom to top; and an anode N + region and a P-region are sequentially arranged in the first isolation region and the second isolation region and between the Pwell region and the back metal layer from bottom to top. According to the RC-IGBT device and the manufacturing method thereof, the snapback phenomenon of the RC-IGBT device can be avoided.

Description

technical field [0001] The present invention relates to the technical field of semiconductor power devices, in particular to a superjunction RC-IGBT device structure. Background technique [0002] IGBTs are usually unidirectional semiconductor power devices, which do not have reverse conduction capability themselves. In most IGBT application circuits, anti-parallel freewheeling diodes FRD are required for protection. Reverse Conducting IGBT (RC-IGBT) integrates IGBT and FRD in the same chip, so that IGBT does not need to be equipped with an additional freewheeling FRD during packaging, which can effectively reduce costs. However, due to the introduction of the N+ region on the back of the diode in the reverse conducting IGBT (RC-IGBT), when the collector voltage is small, the diode formed by the P collector region and the drift region does not conduct, and the device is in unipolar mode; The voltage gradually increases, the diode formed by the P collector region and the dri...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/423H01L29/739H01L27/07
CPCH01L27/0727H01L29/0642H01L29/0634H01L29/0684H01L29/4236H01L29/7398H01L29/7397
Inventor 程炜涛姚阳
Owner 上海埃积半导体有限公司