Unlock instant, AI-driven research and patent intelligence for your innovation.

System and method for tandem VCSEL array

A technology of arrays and sub-arrays, applied in the field of series VCSEL arrays

Pending Publication Date: 2022-06-24
深圳瑞识智能科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These subarrays are electrically connected by series

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • System and method for tandem VCSEL array
  • System and method for tandem VCSEL array
  • System and method for tandem VCSEL array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The following provides a detailed description of the present invention as well as the accompanying drawings and embodiments to further clarify the purpose, technical solutions and advantages of the present invention. Note that the exemplary embodiments discussed in the present invention are intended to illustrate the present invention only. The invention is not limited to the disclosed embodiments.

[0021] FIG. 1 shows a cross-sectional view of a prior art VCSEL array 100 . Array 100 includes VCSELs 1 , 2 and 3 on substrate 106 . The VCSELs are separated by isolation trenches. Substrate 106 is a conductive n-type substrate. Note that array 100 may include thousands or tens of thousands of VCSELs. Therefore, three VCSELs are shown here for illustration only. Similarly, in the other figures and descriptions below, only a few VCSELs or VCSEL sub-arrays are used to explain the principles. VCSEL 1, 2 or 3 represents a top emitting VCSEL structure or VCSEL emitter whic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A VCSEL array (200) includes a series of VCSEL subarrays (1, 2, 3) formed on a single chip. Each VCSEL sub-array (1, 2, 3) comprises a VCSEL emitter fabricated on a semi-insulating layer (213). The N-metal layer (202, 205) of the VCSEL is in electrical contact with the P-metal layer (204, 207) of an adjacent VCSEL through the metal structure (210). A common cathode contact of the VCSEL sub-array is electrically connected to a common anode contact of an adjacent VCSEL sub-array. In order to reduce leakage, the band gap energy level of the semi-insulating layer (213) is higher than the photon energy of the output beam.

Description

technical field [0001] The present invention relates to a vertical cavity surface emitting laser (VCSEL) array, in particular, to a series-connected VCSEL array. Background technique [0002] VCSELs have several distinct advantages over edge-emitting semiconductor lasers. VCSELs emit a circular beam perpendicular to the chip surface, which has a narrow spectrum. High reliability and low temperature sensitivity. Produced by wafer-level manufacturing, the cost is low. Provides design flexibility for addressable large VCSEL arrays that can contain thousands or tens of thousands of individual emitters. [0003] In recent years, VCSEL arrays have played an important role in three-dimensional (3D) sensing applications. For example, many smartphones are equipped with 3D sensors based on VCSEL arrays for facial recognition. In addition, detectors based on VCSEL arrays have entered the emerging field of autonomous driving, helping to quickly and efficiently identify vehicles mov...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/42
CPCH01S5/04257H01S5/04256H01S5/423H01S5/18311H01S5/4018H01S5/0208H01S5/02345
Inventor 姜烔锡锡瓦库马尔·兰卡贺永祥汪洋
Owner 深圳瑞识智能科技有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com