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Semiconductor structure and forming method thereof

A semiconductor and dielectric layer technology, applied in the field of semiconductor structure and its formation, can solve problems affecting device yield, device defects, etc., achieve the effect of solving peeling phenomenon and improving product yield

Pending Publication Date: 2022-06-28
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, when making silicon photonic titanium nitride heaters, the peeling phenomenon (Peeling) of titanium nitride (TIN) often occurs, resulting in defects in the formed device, which affects the yield of the device

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0031] The following description provides specific application scenarios and requirements of the present application, and is intended to enable those skilled in the art to make and use the contents of the present application. Various partial modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments and without departing from the spirit and scope of the application. application. Therefore, the present application is not to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the claims.

[0032] When the traditional process is used to manufacture the silicon photo-nitride heater, the peeling phenomenon of the titanium nitride is very easy to occur, so that the formed device has defects and low yield.

[0033] specifically, Figure 1 to Figure 3 The formation process of a silicon phototitanium nitride heater is shown respect...

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Abstract

The invention provides a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a substrate and a dielectric layer located on the substrate, the dielectric layer comprises a first part and a second part, and the top surfaces of the first part and the second part are coplanar; forming a first sacrificial layer on the surface of the first part of the dielectric layer; forming a second sacrificial layer on the surface and the side wall of the first sacrificial layer and the surface of the second part of the dielectric layer; forming a resistance layer on the surface of the second sacrificial layer; and etching the resistive layer, the second sacrificial layer and the first sacrificial layer, and only leaving the second sacrificial layer and the resistive layer on the surface of the second part of the dielectric layer. According to the technical scheme, the forming method of the semiconductor structure can effectively reduce the stripping phenomenon of the resistance layer.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] Compared with traditional photonic technologies, silicon photonics devices have the advantages of lower cost, higher integration, more embedded co-energy, higher interconnection density and lower power consumption. performance has been extensively studied. [0003] However, when the silicon photon nitride heater is fabricated, the peeling phenomenon (peeling) of titanium nitride (TIN) often occurs, which leads to defects in the formed device and affects the device yield. SUMMARY OF THE INVENTION [0004] The technical problem to be solved by the present application is to provide a semiconductor structure and a method for forming the same, so as to effectively reduce the peeling phenomenon of the resistance layer. [0005] In order to solve the above technical probl...

Claims

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Application Information

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IPC IPC(8): H01L27/06H01L21/822
CPCH01L27/06H01L21/822
Inventor 刘俊封伟博
Owner SEMICON MFG INT (SHANGHAI) CORP