Unlock instant, AI-driven research and patent intelligence for your innovation.

Heterogeneous direct bonding technology based on pyroelectric effect

A direct bonding and pyroelectric technology, which is applied to thermoelectric devices, circuits, and electrical components with thermal changes in dielectric constant. It can solve the problems of bonding efficiency and bonding effect that need to be improved. Simple operation and simple material effect

Pending Publication Date: 2022-06-28
CHONGQING UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of this application is to provide a heterogeneous direct bonding technology based on the pyroelectric effect, which is used to solve the problem that the bonding efficiency and bonding effect of the existing bonding technology need to be improved. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heterogeneous direct bonding technology based on pyroelectric effect
  • Heterogeneous direct bonding technology based on pyroelectric effect
  • Heterogeneous direct bonding technology based on pyroelectric effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] A 128° Y-X cut lithium niobate wafer was used as the first wafer 101 , and a double-throw silicon wafer with a P-type orientation of was used as the second wafer 102 , both of which had a thickness of 500 μm. Use a dicing machine to divide the wafer into a regular size of 20mm×20mm;

[0070] The first wafer 101 and the second wafer 102 with a size of 20mm×20mm were ultrasonically cleaned in acetone for 15 minutes to remove organic pollutants, ultrasonically cleaned in absolute ethanol for 15 minutes to remove inorganic pollutants on the bonding surface, and then rinsed with deionized water Afterwards, dry the wafer surface with nitrogen, and place the cleaned first wafer to be bonded surface 101a and the second wafer to be bonded surface 102a to form a pre-bonded body;

[0071] like image 3 As shown, a piece of 4-inch silicon wafer is placed on the top of the pre-bonded body as the upper gasket 201, and a 2kg weight is added on the upper gasket 201, so that the press...

Embodiment 2

[0074]The only difference between Example 2 and Example 1 is that the maximum temperature of the pre-bonded body is 150°C, 200°C, and 300°C respectively. Other bonding conditions are the same as in Example 1.

Embodiment 3

[0076] The only difference between embodiment 3 and embodiment 1 is that the duration of the pre-bonding body heat preservation stage is 1 hour and 3 hours. Other bonding conditions are the same as in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Melting pointaaaaaaaaaa
Shear strengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a heterogeneous direct bonding technology based on a pyroelectric effect. The direct bonding experiment method comprises the following steps that a first wafer and a second wafer are provided, each of the first wafer and the second wafer is at least provided with a smooth surface, and the first wafer has a pyroelectric effect; placing the smooth surface of the first wafer on the smooth surface of the second wafer to enable the first wafer and the second wafer to form a pre-bonding body; applying pressure to the upper surface and / or the lower surface of the pre-bonded body, and heating the pre-bonded body at the same time; and releasing the pressure on the pre-bonded body, and cooling the pre-bonded body. According to the method, the first wafer and the second wafer can be bonded by utilizing the characteristics of the first wafer without introducing an intermediate layer through simple equipment and simple steps.

Description

technical field [0001] The present application relates to the technical field of processing optoelectronic devices, in particular to a heterogeneous direct bonding technology based on the pyroelectric effect, which belongs to the technical field of processing optoelectronic devices. Background technique [0002] Bonding technology is a processing technology that emerged with the development of integrated circuits and micro-electromechanical systems. Because the ability to integrate many electrical, optical, and electro-optical components on the same platform can reduce costs, increase throughput, and add device functionality not available on standalone platforms. Fabrication of optoelectronic devices using multilayer heterostructures has become a key point to improve the performance of MEMS. The commonly used bonding technologies today are divided into anodic bonding technology, eutectic bonding technology, adhesive bonding technology and direct bonding technology. [0003...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L41/312H01L37/02
CPCH10N15/10H10N30/072
Inventor 刘玉菲王鑫微崔洪源代付康李东玲
Owner CHONGQING UNIV