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Processing method of sputtered LCD target material

A processing method and target technology, which are applied in sputtering coating, metal material coating process, vacuum evaporation coating, etc., can solve the problems of environmental pollution, large consumption of acid solution, increase processing cost, etc., and achieve the processing cost. Low, effective removal, easy to operate effect

Pending Publication Date: 2022-07-01
广东江丰电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This recycling method carries out acid leaching on the target material, and the consumption of acid solution is large, which will increase the processing cost, and the acid solution will also pollute the environment.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] This embodiment provides a method for treating an LCD target after sputtering. The treating method includes protecting the non-sandblasted surface of the LCD target after sputtering, and then protecting the LCD target after sputtering in a sandblasting machine. The back plate of the sand blasting process is sandblasted to remove the residual sputtering material on the back plate; the sand material used in the sand blasting treatment is white corundum; the sand material particle size of the sand blasting treatment is 46 mesh; the sand blasting treatment The air pressure is 8MPa, the sandblasting time is 18min, and the vertical distance between the sandblasting gun and the back plate is 120mm.

Embodiment 2

[0034] This embodiment provides a method for treating an LCD target after sputtering. The treating method includes protecting the non-sandblasted surface of the LCD target after sputtering, and then protecting the LCD target after sputtering in a sandblasting machine. The back plate is sandblasted to remove the residual sputtering material on the back plate; the sand used in the sand blast is white corundum; the sand particle size of the sand blast is 24 mesh; the sand blast The air pressure is 7MPa, the sandblasting time is 15min, and the vertical distance between the sandblasting gun and the back plate is 140mm.

Embodiment 3

[0036]This embodiment provides a method for treating an LCD target after sputtering. The treating method includes protecting the non-sandblasted surface of the LCD target after sputtering, and then protecting the LCD target after sputtering in a sandblasting machine. The back plate is sandblasted to remove the remaining sputters on the back plate; the sand used in the sand blast is white corundum; the sand particle size of the sand blast is 60 mesh; the sand blast The air pressure is 7.5MPa, the sandblasting time is 20min, and the vertical distance between the sandblasting gun and the back plate is 150mm.

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PUM

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Abstract

The invention provides a method for treating a sputtered LCD target material, which comprises the following steps of: performing sand blasting treatment on a back plate of the sputtered LCD target material, and removing sputtering substances remained on the back plate. The treatment method is easy to operate and low in treatment cost, and recycling of the back plate in the sputtered LCD target material is achieved; and sand materials used in sand blasting treatment can be recycled and reused, pollution to the environment is avoided, and the target material recycling method is a green and economical target material recycling method and is suitable for large-scale application and popularization.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for processing an LCD target after sputtering. Background technique [0002] In the semiconductor industry, the target assembly is composed of a target that meets the sputtering performance and a backing plate combined with the target and having a certain strength. The backing plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the function of conducting heat. [0003] There are quite a lot of types of target components, which can be divided into long target, square target and round target according to shape; according to the composition, it can be divided into metal target, alloy target and ceramic compound target; according to different applications, it can be divided into semiconductor related ceramic target , recording medium ceramic targets, display ceramic targets, superconducting ceramic targets and giant ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/58
CPCC23C14/588
Inventor 姚力军潘杰王学泽赵丽李闯范文新周伟君
Owner 广东江丰电子材料有限公司