Compositions, methods of synthesis and uses for depositing materials

A composition and bonding technique used in the field of depositing materials on substrates

Pending Publication Date: 2022-07-01
エーエスエムアイピーホールディングベーフェー
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is challenging to find suitable precursors with the right combination of volatility, reactivity, and stability in demanding deposition applications

Method used

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  • Compositions, methods of synthesis and uses for depositing materials
  • Compositions, methods of synthesis and uses for depositing materials
  • Compositions, methods of synthesis and uses for depositing materials

Examples

Experimental program
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example 2

[0107] Example 2 Preparation of bis(tert-butyl)methylaluminum from trimethylaluminum

[0108] Similarly, the commercially available reagent AlMe can be used according to the following reaction scheme (Scheme II) 3 ,AlCl 3 and tBuLi to prepare tBu2AlMe. A 4-step synthesis method similar to Example 1 can be used, with only differences in each step compared to Example 1.

[0109]

[0110] Scheme II

[0111] Step 1: Combine AlMe in a 1:2 molar ratio 3 and AlCl 3

[0112] AlMe 3 (100 mL, 2.0 M hexane, 200 mmol) and AlCl 3 (400 mmol) were combined in a molar ratio of 1:2 and stirred until the system reached equilibrium.

[0113] Step 2: Add tBuLi

[0114] Under the same conditions as the original procedure above, tBuLi (about 1.7M hexane, about 700 mL, 1.20 mol) was added.

[0115] Steps 3 and 4

[0116] The final steps required to isolate the product can be accomplished as in Example 1.

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Abstract

The present disclosure relates to a composition for depositing a Group 13 metal-containing material on a substrate. The composition comprises a metal alkyl precursor, wherein the metal alkyl precursor comprises a Group 13 metal atom and two different alkyl ligand types. The first ligand type is a branched C4 to C8 alkyl group bonded to a Group 13 metal atom through a carbon atom bonded to three carbon atoms, and the second ligand type is a linear C1 to C4 alkyl group. The Group 13 metal atom is bonded to two ligands of the first ligand type, and the ratio of the first ligand type to the second ligand type in the composition is about 2: 1. Furthermore, the present disclosure relates to methods of making the compositions and uses thereof, as well as methods of depositing materials on substrates.

Description

technical field [0001] The present disclosure generally relates to compositions for depositing metal precursors to form metal-containing layers on substrates. Furthermore, the present disclosure relates to methods of making the compositions and uses thereof, and methods of depositing materials on substrates. Background technique [0002] Group 13 metals, especially aluminum, gallium and indium, are used in various applications in the production of semiconductor devices. An example is metal-containing films for work function tuning applications. Selection of suitable metal precursor compounds is critical to successful deposition and material performance. This metal compound requires a specific combination of physical and chemical properties to be used to produce thin films with the desired composition, resistivity, and effective work function. [0003] Metal alkyl compounds are attractive precursors in vapor deposition. However, it is challenging to find suitable precurso...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/18C23C16/20C23C16/22C23C16/455
CPCC23C16/18C23C16/20C23C16/22C23C16/45553C07F5/062C23C16/448C23C16/54
Inventor C.德泽拉C.惠顿谢琦
Owner エーエスエムアイピーホールディングベーフェー
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