High-luminous-efficiency LED chip and preparation method thereof

Abstract

The invention discloses a high-luminous-efficiency LED chip and a preparation method thereof. The chip comprises a substrate and an epitaxial layer, the current blocking layer is arranged on the P-type semiconductor layer; the transparent conducting layer is arranged on the current blocking layer; the first metal blocking layer and the second metal blocking layer are arranged on the transparent conducting layer; the first insulating layer is arranged on the transparent conducting layer; the high-reflection metal layer is arranged on the first insulating layer; the second insulating layer is arranged on the high-reflection metal layer; the high-reflection metal layer is insulated from the metal barrier layer; wherein the second insulating layer is provided with a P-type conductive electrode and an N-type conductive electrode, the P-type conductive electrode is in contact with the first metal barrier layer through a preset first conductive through hole so as to be connected with the P-type semiconductor layer, and the N-type conductive electrode is in contact with the second metal barrier layer through a preset second conductive through hole so as to be connected with the N-type semiconductor layer. The invention aims to improve the manufacturing process and ensure the production yield of the LED chip.

Description

technical field [0001] The invention relates to the technical field of light-emitting chips, in particular to a high-light-efficiency LED chip and a preparation method. Background technique [0002] A conventional blue-green LED chip generally includes a substrate, an epitaxial layer, a current blocking layer, a transparent conductive layer, a P-type electrode, an N-type electrode and an insulating protective layer. The epitaxial layer generally includes an N-type semiconductor, a multiple quantum well light-emitting region and a P-type electrode. The P-type electrode and the N-type electrode are electrically connected to the P-type semiconductor and the N-type semiconductor, respectively. Among them, the electrical connection between the N-type electrode and the N-type semiconductor needs to make MESA steps, that is, it is necessary to remove the P-type semiconductor and the multi-quantum well light-emitting region in the MESA step region. This process inevitably sacrifices...

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Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the purpose of the present invention is to provide a high-efficiency LED chip and its preparation method, aiming to solve the problem that in the process of manufacturing LEDs in the prior art, due to the small process window, it is easy to lead to a decline in the production yield, which cannot be guaranteed. high production yield

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