Plasma density control system and method

Abstract

The invention discloses a plasma density control system and method. The plasma density control system comprises an ion source, a reaction chamber, a separation blade mechanism and a Faraday cup group, the Faraday cup group is arranged on the wall surface of the reaction chamber corresponding to the screen grid and comprises a Faraday cup mounting rack and at least N Faraday cups; the N Faraday cups correspond to the N groups of screen grid annular holes in the screen grid in position; the separation blade mechanism comprises a driving device controller and at least two groups of separation blade assemblies; each group of separation blade assembly comprises a plurality of separation blades and a separation blade driving device; the plurality of separation blades are uniformly distributed along the circumferential direction of the tail end of the discharge cavity; each separation blade can rotationally extend into the discharge cavity to shield the plasma entering the annular hole of the screen grid; the blocking pieces between the blocking piece assemblies are alternately arranged, and the blocking pieces between the blocking piece assemblies are different in shape. According to the invention, the density of the ion beam led out by the ion source can be measured, the plasma density can be controlled in real time, the problem of non-uniform etching caused by change of process conditions is effectively solved, and the production cost is reduced.

Description

technical field [0001] The invention relates to the field of ion beam etching, in particular to a plasma density control system and method. Background technique [0002] Ion beam etching can be used to etch various metals (Ni, Cu, Au, Al, Pb, Pt, Ti, etc.) and their alloys, as well as non-metals, oxides, nitrides, carbides, semiconductors, polymers , ceramics, infrared and superconducting materials. In principle, the argon gas is decomposed into argon ions by the principle of glow discharge, and the argon ions are accelerated by the anode electric field to physically bombard the surface of the sample to achieve the effect of etching. In the etching process, Ar gas is charged into the discharge chamber of the ion source and ionized to form a plasma, and then the ions are extracted and accelerated by the grid, and the ion beam with a certain energy enters the working chamber and shoots towards the solid surface to bombard the solid. Surface atoms make material atoms sputter ...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a plasma density control system for the above-mentioned deficiencies in the prior art. The plasma density control system and method can measure the ion beam density drawn from the ion source, and control the Density is controlled in real time, effectively solving the problem of uneven etching caused by changes in process conditions, and reducing production costs

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