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Semiconductor structure and manufacturing method of semiconductor structure

A manufacturing method and semiconductor technology, which are applied in semiconductor/solid-state device manufacturing, transistors, electrical components, etc., can solve the problems of limited insulation performance of isolation structures and affect the performance of semiconductor structures, and achieve the effect of improving performance and reducing inductive coupling effects.

Pending Publication Date: 2022-07-08
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The isolation structure used in the related art has limited insulation performance, which affects the performance of the semiconductor structure

Method used

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  • Semiconductor structure and manufacturing method of semiconductor structure
  • Semiconductor structure and manufacturing method of semiconductor structure
  • Semiconductor structure and manufacturing method of semiconductor structure

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Embodiment Construction

[0072] Exemplary embodiments embodying the features and advantages of the present invention will be described in detail in the following description. It should be understood that the present invention can have various changes in different embodiments without departing from the scope of the present invention, and the descriptions and accompanying drawings are essentially for illustration purposes, rather than for limiting the present invention. invention.

[0073] In the following description of various exemplary embodiments of the present invention, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of example various exemplary structures, systems and steps in which various aspects of the present invention may be implemented . It is to be understood that other specific arrangements of components, structures, exemplary devices, systems and steps may be utilized and structural and functional modifications may be made without ...

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Abstract

The invention relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method of the semiconductor structure. The semiconductor structure comprises a substrate, a storage node contact and a capacitance isolation structure, and the storage node contact is located on the substrate; the capacitance isolation structure is located on the substrate and covers the side wall in contact with the storage node, and the capacitance isolation structure comprises a first air gap. The capacitance isolation structure comprises the first air gap, so that the inductive coupling effect is reduced, and the performance of the semiconductor structure is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a semiconductor structure and a method for fabricating the semiconductor structure. Background technique [0002] In semiconductor structures, such as Dynamic Random Access Memory (DRAM) devices, as the devices continue to shrink, the spacing between capacitors becomes smaller and smaller, and the inductive coupling effect of adjacent capacitor contact holes is also is continuously strengthening. The isolation structure adopted in the related art has limited insulating performance, which affects the performance of the semiconductor structure. SUMMARY OF THE INVENTION [0003] The present invention provides a semiconductor structure and a method for fabricating the semiconductor structure to improve the performance of the semiconductor structure. [0004] According to a first aspect of the present invention, there is provided a semiconductor structure compr...

Claims

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Application Information

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IPC IPC(8): H01L27/108H01L21/8242
CPCH10B12/37H10B12/038H10B12/09H10B12/00
Inventor 祝啸
Owner CHANGXIN MEMORY TECH INC