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Cleaning liquid for removing cerium compound, cleaning method, and method for manufacturing semiconductor wafer

A cerium compound and a technology for a manufacturing method, which are applied in the manufacture of semiconductor/solid-state devices, the preparation of detergent mixture compositions, chemical instruments and methods, etc., can solve the problems of difficult removal in the cleaning process, and achieve excellent removability and suppression of poor work. Effect

Pending Publication Date: 2022-07-12
MITSUBISHI CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In recent years, in the CMP process of silicon oxide film and silicon nitride film, in order to increase the polishing speed, cerium-based abrasive particles such as cerium oxide have been used. Bonds are formed on the surface, so it is difficult to remove in the cleaning process

Method used

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  • Cleaning liquid for removing cerium compound, cleaning method, and method for manufacturing semiconductor wafer
  • Cleaning liquid for removing cerium compound, cleaning method, and method for manufacturing semiconductor wafer
  • Cleaning liquid for removing cerium compound, cleaning method, and method for manufacturing semiconductor wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0171] In 100 mass % of the cleaning solution, each component was mixed so that the component (A-1) was 0.10 mass %, the component (B-1) was 0.09 mass %, and the component (E-1) was the remainder to obtain a cleaning solution .

[0172] Table 1 shows the evaluation results of the obtained cleaning solution.

Embodiment 2～10、 comparative example 1～8

[0174] Except for the kind and content of the raw materials shown in Table 1, it carried out similarly to Example 1, and obtained the washing|cleaning liquid.

[0175] Table 1 shows the evaluation results of the obtained cleaning solution.

[0176] [Table 1]

[0177] Table 1

[0178]

[0179] As can be seen from Table 1, the cleaning solutions obtained in Examples 1 to 10 containing both the component (A) and the component (B) were excellent in removability of cerium oxide.

[0180] On the other hand, the cleaning liquids obtained in Comparative Examples 1 to 8, which did not contain any of the component (A) and the component (B), were poor in removability of cerium oxide.

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Abstract

The present invention pertains to a cleaning solution for removing a cerium compound on a silicon oxide film and / or a silicon nitride film, the cleaning solution containing a component (A) and a component (B) as a reducing agent, component (A) is at least one compound selected from the group consisting of a compound represented by formula (1) and a derivative thereof, a compound represented by formula (2) and a derivative thereof, a compound represented by formula (3) and a derivative thereof, and a compound represented by formula (4) and a derivative thereof. (In the formula, R1-R12 and n are each the same as defined in the description. ).

Description

technical field [0001] The present invention relates to a cleaning solution for removing a cerium compound, a cleaning method, and a method for producing a semiconductor wafer. Background technique [0002] For a semiconductor wafer, after forming a deposition layer of a metal film as wiring and an interlayer insulating film on a silicon substrate, chemical mechanical polishing (Chemical Mechanical Polishing) using an abrasive composed of an aqueous slurry containing abrasive particles is performed. This semiconductor wafer is manufactured by performing surface planarization treatment for the "CMP") process, and superimposing a new layer on the flattened surface. In the microfabrication of a semiconductor wafer, it is necessary to have high-precision flatness in each layer, and the importance of a flattening process by CMP is very high. [0003] In the semiconductor device manufacturing process, in order to electrically separate components such as transistors, STI (Shallow ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304C11D17/08C11D7/22C11D7/26C11D7/36
CPCC11D7/36H01L21/02065C11D17/0008C11D2111/22C11D7/16C11D7/265C11D7/3209H01L21/02041H01L21/304C09G1/02C11D7/08C11D7/268H01L21/30625
Inventor 安龙杰草野智博小野由香子竹下宽清野健一
Owner MITSUBISHI CHEM CORP