Low oxide trench recess shallow trench isolation chemical mechanical planarization polishing
一种化学机械、氧化物的技术，应用在含研磨剂的抛光组合物、抛光组合物、其他化学过程等方向，能够解决未提出氧化物沟槽凹陷重要性等问题
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Embodiment 1
[0141] In Example 1, the polishing compositions prepared are shown in Table 1. The pH of the compound was about 5.35.
[0142] The chemical additive poly(methacrylic acid) (PMAA) with a MW of about 5,000 or its deionized form (deionized PMAA) was used at 0.10 wt%, respectively, as shown in Table 1 .
[0143] Removal rates (RR expressed in Angstroms / min) were tested for different membranes. The results are shown in Table 1.
[0144] The effect of PMAA with a molecular weight of 5,000 or its deionized form on membrane removal rate and selectivity was observed.
[0145] Table 1. Effects of additives on membrane RR and selectivity
[0146]
[0147] As shown in Table 1, the addition of poly(methacrylic acid) (PMAA) or its deionized form of chemical additives decreased the removal rate of all tested membranes. Similar TEOS:SiN film polishing selectivities were obtained.
Embodiment 2
[0149] In Example 2, the polishing compositions prepared are shown in Table 2. The pH of the CMP polishing composition was 5.35.
[0150] The chemical additive poly(methacrylic acid) having a molecular weight of about 5,000 was used at 0.10% by weight.
[0151] Oxide trenches 100 μm and 200 μm pitting vs. overpolishing were tested and the results are shown in Table 2.
[0152] Table 2. Effect of PMAA on oxide trench recess vs. OP amount
[0153]
[0154] As shown in the results in Table 2, the addition of 0.1 wt% PMAA with 5,000 MW to the reference STI CMP polishing composition containing 0.2 wt% ceria-coated silica abrasive significantly reduced oxide trench dishing, for both For oxide trench features of different sizes, the reduction of oxide trench recess is >100%.
[0155] Using MW 5,000 PMAA as oxide trench undercut reducer vs. different oxide film overpolish thicknesses, undercuts were significantly reduced.
Embodiment 3
[0157] In Example 3, the polishing compositions prepared are shown in Table 3. In the listed polishing compositions, 0.2 wt% ceria-coated silica was used as the abrasive for the reference sample and all three test samples. The pH of each of these compositions was about 5.35.
[0158] Deionized PMAA with a molecular weight of 5,000 was used at 0.05 wt %, 0.1 wt %, and 0.15 wt %, respectively.
[0159] The removal rates of these polishing compositions were tested and are shown in Table 3.
[0160] Table 3. Film RR of polishing compositions containing different % PMAA
[0161]
[0162]
[0163] As shown in the results in Table 3, when different concentrations of PMAA were used as chemical additives in the polishing composition, the removal rate of all three types of films decreased, but the concentration change of PMAA of MW 5,000 over the tested range had a significant effect on TEOS , HOP and SiN film removal rates were not significantly affected, and the use of PMAA a...
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