High-frequency equivalent circuit, and modeling method and modeling device for high-frequency equivalent circuit

Abstract

The embodiment of the invention discloses a high-frequency equivalent circuit and a modeling method and device of the high-frequency equivalent circuit. The circuit is characterized in that an equivalent resistor, an equivalent capacitor and a drain parasitic inductor are connected in series and are connected in parallel with an absorption circuit formed by connecting a parasitic inductor, an absorption resistor and an absorption capacitor in series, and then an upper tube is connected in series to conduct the equivalent resistor, a power loop parasitic inductor, a direct-current link equivalent series resistor, a power supply, a power loop resistor and a shunt resistor. According to the invention, the problems of serious voltage overshoot, extra power loss, electromagnetic interference noise, even device breakdown and system reliability reduction caused by large oscillation of a Cascode type GaN device under high switching frequency in the prior art are solved; the technical effects of quantitatively suppressing switching oscillation and matching oscillation suppression parameters, ensuring safe and reliable operation of the GaN device and fully exerting the high-frequency switching characteristic of the GaN power device are achieved.

Description

technical field [0001] The invention relates to the technical field of device power conversion, in particular to a high-frequency equivalent circuit, a modeling method and a modeling device for a high-frequency equivalent circuit. Background technique [0002] In recent years, power devices made of gallium nitride (GaN), a third-generation wide-bandgap semiconductor material, have gradually emerged in high-speed and high-power-density power electronic applications. Compared with Si and SiC, GaN power devices have higher switching frequency, smaller on-resistance and smaller gate charge, which means that GaN devices have obvious advantages in high power density and high efficiency converters. The advantages. [0003] Since the depletion-mode GaN device is a normally-on device, the drive and fault protection are not easy to do, and it is not suitable for bridge converter applications. In order to solve this problem, cascading gallium nitride (Cascode-type GaN for short) and ...

AI Technical Summary

Problems solved by technology

[0006] Embodiments of the present invention provide a high-frequency equivalent circuit, a modeling method and a modeling device for a high-frequency equivalent circuit, to at least solve the problem of large oscillations caused by Cascode-typ

Images