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Manufacturing method of PMOS with HKMG

A manufacturing method and a work function metal layer technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of not being able to block Al diffusion well, and achieve the benefits of filling, reducing downward diffusion, and threshold The effect of maintaining a stable voltage

Pending Publication Date: 2022-07-29
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] The above existing methods cannot well block Al diffusion

Method used

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  • Manufacturing method of PMOS with HKMG
  • Manufacturing method of PMOS with HKMG
  • Manufacturing method of PMOS with HKMG

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053] like image 3 As shown, it is a flow chart of a manufacturing method of a PMOS with HKMG according to an embodiment of the present invention; as 4A to 4D As shown, it is a device structure diagram in each step of the manufacturing method of the PMOS with HKMG in the embodiment of the present invention; in the manufacturing method of the PMOS with HKMG in the embodiment of the present invention, the gate structure forming step of the PMOS includes:

[0054] like Figure 4A As shown, the gate structure of the PMOS is formed in the gate trench, and before the subsequent step 1, it further includes:

[0055] The dummy gate structures are removed to form the gate trenches.

[0056] Depend on Figure 4AAs shown, the dummy gate structure is formed on the surface of the semiconductor substrate 201 . The spacers 203 are self-aligned and formed on the side surfaces of the dummy gate structure, and the gate trenches are surrounded by the inner side surfaces of the spacers 203...

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PUM

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Abstract

The invention discloses a manufacturing method of a PMOS (P-channel Metal Oxide Semiconductor) with an HKMG (High Kernel Metal Oxide Semiconductor). A gate structure of the PMOS is formed by the following steps of: 1, forming a gate dielectric layer; 2, growing a P-type work function metal layer, wherein the grown P-type work function metal layer is of a polycrystalline structure; 3, performing annealing treatment to enable grains of the polycrystalline structure of the P-type work function metal layer to be mutually combined so as to reduce the number of the grains of the polycrystalline structure and increase the blocking effect on metal diffusion of the metal conductive material layer; 4, forming a top barrier layer; and 5, forming a metal conductive material layer. According to the invention, downward diffusion of metal of the metal conductive material layer can be reduced, and the threshold voltage of the device is kept stable.

Description

technical field [0001] The present invention relates to the field of semiconductor integrated circuits, in particular to a MOS transistor with a high dielectric constant metal gate (HKMG). The present invention also relates to a method of manufacturing a MOS transistor with a high dielectric constant metal gate. Background technique [0002] Threshold voltage (Vt) is a very important parameter for the performance of 28HKMG. The metal of the metal gate is usually Al, and the diffusion of Al will seriously affect the size of Vt. In the process, it is necessary to stabilize Vt in a small range as much as possible. Existing methods cannot block Al diffusion well. [0003] like figure 1 As shown, is the flow chart of the existing manufacturing method of PMOS with HKMG; as figure 2 As shown, it is a device structure diagram of the PMOS formed by the existing manufacturing method of the PMOS with HKMG; in the existing manufacturing method of the PMOS with HKMG, the gate struc...

Claims

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Application Information

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IPC IPC(8): H01L21/321H01L21/28H01L21/336
CPCH01L21/28079H01L21/321H01L29/66477
Inventor 王诗昊王莎莎席晓阳
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD