Cleaning method of thinned carrying platform

A carrier and cleaning liquid technology, applied in the direction of cleaning methods using liquids, cleaning methods using gas flow, cleaning methods and utensils, etc., can solve the problems that affect the production progress and impurity cannot be cleaned, so as to improve production efficiency, The effect of reducing Dimple rate and improving product yield rate

Pending Publication Date: 2022-08-05
中环领先半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The silicon wafer is placed on the thinning stage for thinning and grinding. The thinning stage is equipped with a number of ceramic holes, which will absorb impurities. , Impurities will cause dimples on the silicon wafer. The original cleaning method is to stop the line and remove the thinning carrier. It takes 6 hours to remove it, then soak it in alcohol, and press the ceramic hole with an air gun. A blow to remove impurities, the whole process needs to be repeated 2-3 times, and then reinstall and debug the thinning carrier, and then purify after installation, the whole process takes at least 50 hours, which seriously affects the production progress

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] S1. To prepare a cleaning solution, take a 5000ml measuring cup, pour 200ml of the boundary / surfactant and 2000ml of pure water into the container to get a cleaning solution; the boundary / surfactant is boundary / surface C produced by Nikkei Seiko Co., Ltd.

[0020] S2. Turn on the vacuum adsorption function on the thinning stage, and evenly pour the cleaning solution in step S1 onto the thinning stage until the thinning stage cannot be adsorbed. At this time, the thinning stage is immersed in the cleaning solution for 10 minutes.

[0021] S3. Turn on the air blowing and water blowing functions, blow out the impurities on the surface of the thinned stage and in the ceramic holes through the device, clean and dry, adjust the water and air volume to the maximum value, and purify continuously for 1 hour.

Embodiment 2

[0023] S1. To prepare a cleaning solution, take a 5000ml measuring cup, pour 200ml of the boundary / surfactant and 2500ml of pure water into the container to get a cleaning solution; the boundary / surfactant is boundary / surface C produced by Nikkei Seiko Co., Ltd.

[0024] S2. The thinning stage turns on the vacuum adsorption function, and the cleaning solution in step S1 is evenly poured onto the thinning stage until the thinning stage cannot be adsorbed. At this time, the thinning stage is immersed in the cleaning solution for 20 minutes.

[0025] S3. Turn on the air blowing and water blowing functions, blow out the impurities on the surface of the thinned stage and in the ceramic holes through the device, clean and dry, adjust the water and air volume to the maximum value, and purify continuously for 1.5 hours.

Embodiment 3

[0027] S1. To prepare a cleaning solution, take a 5000ml measuring cup, pour 200ml of the boundary / surfactant and 3000ml of pure water into the container to get a cleaning solution; the boundary / surfactant is boundary / surface C produced by Nikkei Seiko Co., Ltd.

[0028] S2, the thinning stage turns on the vacuum adsorption function, and the cleaning solution in step S1 is evenly poured onto the thinning stage until the thinning stage cannot be adsorbed. At this time, the thinning stage is immersed in the cleaning solution for 30 minutes.

[0029] S3. Turn on the air blowing and water blowing functions, blow out the impurities on the surface of the thinned stage and in the ceramic holes through the device, clean and dry, adjust the water and air volume to the maximum value, and purify continuously for 2 hours.

[0030] The cleaning method of the present invention solves the problem of impurity deposition and clogging during the long-term processing of the thinning stage, reduce...

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PUM

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Abstract

The invention discloses a cleaning method for a thinned platform deck, which comprises the following steps: S1, preparing a cleaning solution, taking a container, pouring a surfactant and pure water into the container according to a certain proportion, and mixing to obtain the cleaning solution; s2, the vacuum adsorption function of the thinning platform deck is started, the cleaning solution in the step S1 is evenly poured to the thinning platform deck till the thinning platform deck cannot adsorb, and at the moment, the thinning platform deck is soaked in the cleaning solution for a period of time; and S3, air blowing and water blowing functions are started, impurities on the surface of the thinning carrying table and in the ceramic holes are blown out through the device, cleaning and drying are carried out, the water amount and the air amount are adjusted to the maximum value, and continuous purification is carried out for a period of time. According to the invention, the problem of impurity deposition and blockage in the long-term processing process of the thinning platform deck is solved, the Dimple rate of the silicon wafer is reduced, and the product yield is improved. And meanwhile, the thinning platform deck does not need to be disassembled and assembled in a line stopping mode, online cleaning is directly conducted, and the production efficiency is greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a cleaning method for a thinning stage. Background technique [0002] The silicon wafer is placed on the thinning stage for thinning and grinding. The thinning stage has a number of ceramic holes, which will absorb impurities. The impurities in the thinning stage cannot be cleaned only by self-purification. , the impurities will cause small pits (Dimple) in the silicon wafer. The original cleaning method is to stop the line, remove the thinning stage, and it takes 6 hours to remove it. Then soak it with alcohol, and then press the ceramic hole with an air gun. The whole process needs to be repeated 2-3 times by blowing air to remove impurities, and then the thinning stage is re-installed and debugged, and then cleaned after installation. The whole process takes at least 50 hours, which seriously affects the production progress. SUMMARY OF THE INVENTION [0003] The inve...

Claims

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Application Information

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IPC IPC(8): B08B3/08B08B5/02B08B13/00
CPCB08B3/08B08B5/02B08B13/00Y02P70/50
Inventor 刘姣龙刘建伟邓欢蒋文斌李苏峰秦岩松
Owner 中环领先半导体材料有限公司
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