Cleaning method of thinned carrying platform

Abstract

The invention discloses a cleaning method for a thinned platform deck, which comprises the following steps: S1, preparing a cleaning solution, taking a container, pouring a surfactant and pure water into the container according to a certain proportion, and mixing to obtain the cleaning solution; s2, the vacuum adsorption function of the thinning platform deck is started, the cleaning solution in the step S1 is evenly poured to the thinning platform deck till the thinning platform deck cannot adsorb, and at the moment, the thinning platform deck is soaked in the cleaning solution for a period of time; and S3, air blowing and water blowing functions are started, impurities on the surface of the thinning carrying table and in the ceramic holes are blown out through the device, cleaning and drying are carried out, the water amount and the air amount are adjusted to the maximum value, and continuous purification is carried out for a period of time. According to the invention, the problem of impurity deposition and blockage in the long-term processing process of the thinning platform deck is solved, the Dimple rate of the silicon wafer is reduced, and the product yield is improved. And meanwhile, the thinning platform deck does not need to be disassembled and assembled in a line stopping mode, online cleaning is directly conducted, and the production efficiency is greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a cleaning method for a thinning stage. Background technique [0002] The silicon wafer is placed on the thinning stage for thinning and grinding. The thinning stage has a number of ceramic holes, which will absorb impurities. The impurities in the thinning stage cannot be cleaned only by self-purification. , the impurities will cause small pits (Dimple) in the silicon wafer. The original cleaning method is to stop the line, remove the thinning stage, and it takes 6 hours to remove it. Then soak it with alcohol, and then press the ceramic hole with an air gun. The whole process needs to be repeated 2-3 times by blowing air to remove impurities, and then the thinning stage is re-installed and debugged, and then cleaned after installation. The whole process takes at least 50 hours, which seriously affects the production progress. SUMMARY OF THE INVENTION [0003] The inve...

AI Technical Summary

Problems solved by technology

[0002] The silicon wafer is placed on the thinning stage for thinning and grinding. The thinning stage is equipped with a number of ceramic holes, which will absorb impurities. , Impurities will cause dimples on the silicon wafer. The original cleaning method is to stop the line and remove the thinning carrier. It takes 6 hours to remove it, then soak it in alcohol, and press the ceramic hole with an air gun. A blow to remove impurities, the whole process needs to be repeated 2-3 times, and then reinstall and debug the thinning carrier, and then purify after installation, the whole process takes at least 50 hours, which seriously affects the production progress