IGBT (Insulated Gate Bipolar Translator) short-circuit fault positioning circuit for complex topology electronic conversion device

Abstract

The invention relates to an IGBT (Insulated Gate Bipolar Translator) short-circuit fault positioning circuit for a complex topology electronic conversion device. The IGBT short-circuit fault positioning circuit comprises a CPU (Central Processing Unit) circuit, an interface circuit and an IGBT driving circuit, the CPU circuit is connected with the interface circuit, and the CPU circuit generates parallel PWM switching signals and transmits the PWM switching signals to the interface circuit; the interface circuit is connected with the IGBT driving circuit, converts the parallel PWM signals into optical signals and transmits the optical signals to the IGBT driving circuit; the IGBT drive circuit transmits the short-circuit fault optical signal to the interface circuit, and the interface circuit processes the short-circuit fault optical signal and then sends the short-circuit fault optical signal to the CPU circuit. Short-circuit fault signals sent by a plurality of IGBT drive circuits do not need to be connected to the CPU in parallel, the number of electrical connection lines or optical fiber connections of the system is reduced, the cost and the complexity of the system are reduced, and the reliability of the power electronic conversion device is effectively improved in a complex electromagnetic environment.

Description

technical field [0001] The invention belongs to the technical field of mine electrical equipment, and in particular relates to an IGBT short-circuit fault location circuit used in a complex topology electronic conversion device. Background technique [0002] As power devices, IGBTs are widely used in power electronic conversion devices of various topologies. With the development of IGBT device drive and protection technology, new energy and other industries, higher requirements have been put forward for the performance of power electronic conversion devices, and its topology structure tends to be complicated. For series and parallel topologies, the increase in voltage level and level, and the increase in the capacity of the whole machine double the number of IGBT devices. When a short-circuit fault occurs in the IGBT, the specific IGBT device that has a short-circuit fault can be judged. important meaning. [0003] The prior art is aimed at the traditional IGBT short-circu...

AI Technical Summary

Problems solved by technology

[0003] Existing technology The traditional IGBT short-circuit fault location method for simple topology, the fault signal of each IGBT device is directly collected by the CPU in parallel, when the number of IGBT devices increases, the IO resources occupied by the CPU also increase, and multiple devices are grouped and combined The method of location can only locate the fault to a certain unit or circuit, and cannot distinguish specific components, which brings difficulties to accurate fault location and cause analysis

[0004] The existing technology is aimed at a slightly more complex topology, such as the series topology of multi-level devices. When a short circuit occurs, the specific device must be located, otherwise the normal device in series will be damaged.

This topology generally adds processors, FPGAs and other devices between the IGBT drive circuit and the CPU for fault judgment, and can also achieve accurate positioning of short-circuit faults, but the cost is high

[0005] The existing short-circuit fault location technology of simple topology is applied in complex topology. The hardware connection is complex and the signals are parallel, which leads to waste of IO resources. When the electromagnetic environment is complex, it is easy to be interfered, and there are hidden dangers in reliability.

However, adding processors, FPGAs and other devices between the CPU and the IGBT drive circuit is costly.

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