In-situ hot-wire chemical gas-phase deposition process for preparing MgB2 superconductor film

A technology of hot wire chemistry and superconducting thin film, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., and can solve the difficult problem of containing MgO impurities in the film

Inactive Publication Date: 2004-09-29
YANSHAN UNIV
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Problems solved by technology

However, currently reported MgB 2 The preparation of superconducting thin films mainly adopts the ex-situ method of annealing in Mg vapor after deposition.
Few research groups have reported the in-situ preparation of the thin film. They used physical deposition methods such as pulsed laser deposition, molecular beam epitaxy and sputtering, but the obtained thin film T c T c The value is much lower, and these methods are difficult to solve the problem of MgO impurity phase in the film

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  • In-situ hot-wire chemical gas-phase deposition process for preparing MgB2 superconductor film
  • In-situ hot-wire chemical gas-phase deposition process for preparing MgB2 superconductor film

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Embodiment Construction

[0007] figure 1 An embodiment disclosed for the present invention (see figure 1 ), the invention uses a gaseous compound containing B and Mg as the reaction gas, so that it is cracked under the action of the hot wire 4, and the reaction generates MgB 2 compound and grow into a thin film on the substrate 6.

[0008] In the present invention, due to the easy oxidation of Mg strips, MgO generally exists on the surface of Mg solids, but it has a melting point much higher than Mg, so it is difficult to evaporate and deposit on the substrate, thereby ensuring the evaporation of pure Mg and inhibiting MgO was formed in the film. However, for currently reported physical methods, such as pulsed laser evaporation deposition and sputtering methods, due to the MgB 2 The target sintering process will inevitably form MgO impurities, so the MgO impurities in the target will inevitably be mixed with MgB 2 At the same time, it is evaporated or sputtered out to form an impurity phase in the...

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Abstract

A superconductor MgB2 film is prepared by in-situ hot-wire chemical gas-phase deposition method, which is characterized by that the gas-state compound containing B and Mg takes part in splitting reaction under the action of hot wire to generate MgB2 compound, which is growing on substrate to become film. Said superconductor film has features of no MgO phase in it and 35K of zero resistance change temp.

Description

technical field [0001] The invention relates to a new superconducting material-MgB 2 Thin film in situ preparation method. Background technique [0002] The Japanese Akimitsu research group reported MgB for the first time on January 10, 2001 at the "Transition Group Metal Oxide Symposium" in Sendai 2 With superconductivity and superconducting critical transition temperature T c Up to 39K, and published in "Nature". This is the highest T c Binary simple compounds of values. Subsequently, it attracted the attention of scientists internationally, and the superconducting properties of the compound were extensively studied. Studies have shown that the compound not only has a high superconducting critical transition temperature, but also has a large coherence length, high critical current density and critical field, large carrier density, non-weak connection of grain boundaries, small each Anisotropy and large energy gap and other characteristics. Therefore, it can be appli...

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Application Information

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IPC IPC(8): C23C16/38
Inventor 田永君王天生迟振华胡前库罗晓光漆汉宏
Owner YANSHAN UNIV
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