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Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling

A vertical growth, cadmium selenide technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve problems affecting crystal growth, low crystal resistivity, increased insecurity, etc., to reduce crystal growth Cost, simplified growth process, and the effect of avoiding secondary pollution

Inactive Publication Date: 2004-11-17
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of the liquid phase method is that the size of the grown single crystal is small, generally a few millimeters, and the crystal contains residual solvent package, so the application is limited
The disadvantages of the temperature gradient melt zone melting method are: 1. Crystal growth requires a high-pressure vessel, resulting in increased cost and increased insecurity; 2. The grown crystal has high stress, many defects, and low quality
The shortcomings of the static vapor phase growth method are: 1. The crystal grows statically, causing the crystallization interface to move, the growth temperature gradient is not constant, and the radial temperature field is unevenly distributed, thus affecting crystal growth and making it difficult to form a single crystal with complete and uniform structure; 2. The grown crystal resistivity is low, generally in the range of 10 1～2 Ωcm

Method used

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  • Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling
  • Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling
  • Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling

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Embodiment

[0046] In this example, a cadmium selenide single crystal with a size of φ10×40 mm was prepared, and the ampoule used was such as figure 2 As shown, it is composed of a φ10 mm×600 mm quartz tubular body, a heat conducting rod 4 and a hanging ring 5. The tubular body is divided into a purification section 1 and a growth section 2 by a neck 3. The length ratio of the purification section to the growth section is 3: 1. The end of the growth section is a closed structure and a cone, the cone angle of the conical end is 25°, and the conical section is provided with a tube neck 6 to facilitate the geometric elimination of crystal nuclei to form mononuclear growth.

[0047] The process flow of this embodiment is as figure 1 As shown, the steps are as follows:

[0048] 1. Clean the ampoule

[0049]The cleaning ampoule adopts the process of combining comprehensive cleaning and vacuum baking:

[0050] (1) Comprehensive cleaning

[0051] First, soak and rinse the inner wall of the ampoule ...

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Abstract

A vertical gas-phase pulling-up method for growing cadmium selenide monocrystal features that the cadmium selenide powder is used as raw material and the purification of raw material and the growth of monocrystal are performed in a single ampoul consisting of tubular body divided into purifying and growing segment, heat conducting rod and hanging ring. The said method includes cleaning ampoul, charging raw material, vacuumizing, sealing, multi-stage purifying, cutting and separating ampoul, thermal cleaning growing segment, growing crystal and cooling. The resultant monocrystal features complete structure, high uniformity, low stress, bit size phi(10-20)X(30-40)mm and high resistivity (10 to power 6-8 omega cm).

Description

Technical field [0001] The invention belongs to the field of single crystal preparation, and particularly relates to a method for growing a cadmium selenide single crystal. Background technique [0002] Cadmium selenide (CdSe) single crystal is a II-VI wide bandgap compound semiconductor material. In recent years, it has attracted much attention due to its excellent room temperature nuclear radiation detection performance and nonlinear optical performance. However, due to the relatively low melting point of cadmium selenide High (1239°C), the vapor pressure of the two components constituting it is relatively high, and the thermal conductivity of the crystal is low, so it is difficult to prepare large-size and high-quality cadmium selenide single crystals. At present, the preparation of CdSe single crystals mainly adopts liquid phase method, temperature gradient melt zone melting method and static vapor growth method. The disadvantage of the liquid pha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/48
Inventor 朱世富赵北君
Owner SICHUAN UNIV