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Match circuit and plasma processing device

A technology of matching circuit and high-frequency electricity, which is applied in the direction of plasma, circuit, discharge tube, etc., can solve the problems of unstable matching state and temperature rise

Inactive Publication Date: 2005-03-30
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This leads to the problem that the temperature rises locally and the matching state becomes unstable

Method used

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  • Match circuit and plasma processing device
  • Match circuit and plasma processing device
  • Match circuit and plasma processing device

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] Embodiments of the present invention will be described below with reference to the accompanying drawings.

[0039] figure 1 A matching circuit 30 of the present invention is shown. The plasma processing device using the matching circuit 30 and Figure 4 The typical plasma processing apparatus shown is the same and, therefore, neither description nor illustration thereof is provided.

[0040] The matching circuit 30 matches the impedance of the antenna 11 of the plasma processing apparatus and the high-frequency power source 18 of the antenna, which have the characteristic impedance of the coaxial tube 19 . A coaxial tube 19 from an antenna high-frequency power supply 18 is connected to an input terminal 31, and one end of a first variable capacitor 32 serving as a first variable reactance element is connected to the input terminal 31. The other end of the first variable capacitor 32 is connected to the tap 34 of the fixed coil 33 . The fixed coil 33 is composed of a...

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Abstract

The present invention provides a matching circuit which has a wide range in which matching can be achieved and the matched state of which is stabilized with respect to a change in the load state. To an input terminal (31) of a matching circuit (30), one terminal of a first variable reactance element (32) is connected. The other terminal of the first variable reactance element (32) is connected to a point between a first fixed reactance element (33a) and a second fixed reactance element (33b), which are connected in series. The first fixed reactance element (33a) is grounded, and the second fixed reactance element (33b) is connected to one terminal of a second variable reactance element (36) and connected to one terminal of a stripline (37). The other terminal of the second variable reactance element (36) is grounded, and the other terminal of the stripline (37) is connected to an output terminal (38).

Description

technical field [0001] The present invention relates to a circuit and a plasma processing device for processing electronic devices such as semiconductors, liquid crystal devices, and micromotors. Background technique [0002] In processing electronic devices such as semiconductors, liquid crystal devices, and micromotors, thin film processing technology by plasma processing has been utilized. Figure 4 A typical plasma processing apparatus disclosed in Japanese Laid-Open Patent Publication No. 2001-53060 is shown. The gas supply system 2 is arranged on the side wall of the vacuum container 1 . When the specified gas is supplied to the inside of the vacuum container through the gas supply system 2, air is discharged by the turbomolecular pump 4 through the discharge port 3 provided on the bottom wall, and the inside of the vacuum container 1 maintains a specified pressure. A pressure regulating valve 5 for controlling the inside of the vacuum container 1 to a prescribed pres...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/46B01J19/08H01J37/32H01L21/205H01L21/302H01L21/3065H03H7/40
CPCH01J37/32183H01J37/32082
Inventor 住田贤二奥村智洋前川幸弘中山一郎筱原己拔神田稔又村慎一
Owner PANASONIC CORP