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Alloy target material for conduction film and its preparation method

A conductive thin film and alloy target technology, which is applied in metal material coating process, ion implantation plating, coating, etc. Problems with target or etchant

Inactive Publication Date: 2005-04-20
RITDISPLAY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the past, it was proposed to use silver as a material for wafers or display device wires or electrodes, but it has not been widely used because there is no suitable and stable target material or etching solution composition.
[0004] And the silver alloy that contains silver content more than 80%, although the resistance value is not as low as silver metal, its resistance value is far lower than that of chromium metal, and it is still a suitable chip or display device wire or electrode material, but because silver alloy does not have Appropriate target or etchant, so it is not widely used in yellow light process of wafer or display panel

Method used

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  • Alloy target material for conduction film and its preparation method
  • Alloy target material for conduction film and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Production of alloy targets for conductive thin films

[0033] Mix 2250 grams of silver (Ag), 250 grams of copper (Cu) and 1000 grams of palladium (Pd). After that, the mixed metals are arc-melted to produce a master alloy. Add 46,500 grams of silver (Ag) and the previously made master alloy to mix the material, place it in a vacuum melting furnace at 1100-1300 degrees Celsius for 3-5 hours for smelting. After the mixture is completely melted, the metal The molten broth is poured into the mold, and after it is cooled and solidified, the silver alloy ingot is taken out from the mold. According to the required target size, the obtained ingot is satin-made with 600-800 tons and hot rolled with 80 horsepower or more. The crystal direction is controlled to be non-preferred. After heat treatment, the crystal grain size of the microstructure is controlled. About 20-50 microns to form alloy targets.

Embodiment 2

[0035] Production of alloy targets for conductive thin films

[0036] A mixture of 1000 grams of silver (Ag), 350 grams of copper (Cu), 600 grams of palladium (Pd), and 10 grams of chromium was prepared. After that, the mixed metals are arc-melted to produce a master alloy. Add 47045 grams of silver (Ag) and the previously made master alloy to mix and prepare, place it in a vacuum melting furnace at 1100-1300 degrees Celsius for 3-5 hours for smelting. After the mixture is completely melted, The molten metal is poured into the mold, and after it is cooled and solidified, the silver alloy ingot is taken out from the mold. According to the required target size, the obtained ingot is forged with 600-800 tons and hot rolling with 80 horsepower or more. The crystal direction is controlled to be non-preferred. After heat treatment, the crystal grain size of the microstructure is controlled. About 20-50 microns to form alloy targets.

Embodiment 3

[0038] The target manufactured in Example 1 was placed in a splash chamber. The structure of the splash chamber is as figure 1 Shown; including a DC power supply 100, a grounding shield 250, a gas inlet 700, a vacuum pump 600, and a base 400 where the panel is placed. When sputtering, the target 200 is connected to the cathode of the power supply 100, and the panel 300 of a flat display device is placed in the sputtering chamber, and then argon gas with a flow rate of 20sccm is introduced. With 200W DC power, the sputtering chamber maintains 5mtorr Sputtering under vacuum for 10 minutes forms a silver alloy layer with a thickness of 21300 Å on the display panel 300. The silver alloy layer has been tested for electrical conductivity, and its electrical impedance is 0.0279ohm / γ. After 85H / 85℃ high temperature and high humidity test, the peeling test with tape can be used to verify its good adhesion. .

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Abstract

The invention relates to an alloy target material for a conductive thin film, comprising silver (Ag), copper (Cu) and at least one precious metal selected from the group consisting of palladium (Pd), gold (Au) and platinum (Pt) , wherein the silver content is 80 to 99.8 atomic percent; the copper content is 0.1 to 10 atomic percent; the precious metal content is 0.1 to 10 atomic percent; and the total atomic percent of the alloy target is 100.

Description

Technical field [0001] The invention relates to an alloy target for conductive thin films and a manufacturing method thereof, in particular to an alloy target suitable for wires or electrodes of a semiconductor substrate or an organic electroluminescent display substrate and a manufacturing method thereof. Background technique [0002] Flat-panel displays (such as organic electroluminescent displays (OELDs, etc.)) have gradually replaced cathode ray tube displays as the focus of the display due to their light, thin, short and small features. The composition and structure of various flat-panel displays or their display images Although the technical methods are different, conductive materials (such as indium tin oxide (ITO) or aluminum zinc oxide (Aluminum Zinc Oxide; AZO) are used as anodes on the substrates in various flat-panel display structures). , And combined with a low work function metal or alloy cathode as the control structure of the light-emitting pixel. [0003] In cur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C5/06C23C14/14C23C14/34
Inventor 张毅赵勤孝黄添旺陈虹桦
Owner RITDISPLAY