Forming semiconductor element with metal base board

Abstract

This invention provides a method for forming a semiconductor element with a metal baseplate including a semiconductor baseplate as a temporary one then forming a semiconductor layer on it; to form a metal baseplate on the semiconductor layer and remove the semiconductor baseplate finally. The reliability and life time of the semiconductor elements can be increased with high heat and electric conductivity.

Description

Technical field: [0001] The present invention relates to a structure and a method of forming a semiconductor element, in particular to a structure and method of an optical semiconductor element. Background technique: [0002] Semiconductor components have been widely used in various electronic products, such as central processing units, memories, microwave components, light-emitting components, and so on. [0003] Since semiconductor components generate heat and increase the temperature of semiconductor components, the reliability and service life of semiconductor components will be shortened. In addition, whether it is a light-emitting diode, edge-fired laser, or surface-fired laser, the luminous efficiency of the component will change. difference. Take the AlGaInP type light-emitting diode as an example. The principle of light emission is that electrons in the Γ band combine with holes through the direct energy gap to generate light; when the temperature rises, part of the elec...

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Problems solved by technology

However, since the lattice constant of the substrate must be close to the lattice constant of the epitaxial layer of the semiconductor light-emitting element, this method limits the choice of the substrate

The second method is to grow a distributed Bragg reflector (Distributed Bragg Reflector, DBR) between the light-emitting diode structure layer and the substrate, and then grow the light-emitting diode structure on the Bragg reflector, but because the Bragg reflector can only reflect near-normal incident light Light, for the rest of the non-vertically incident light, there will still be a considerable part of the light passing through the Bragg reflector and being absorbed by the substrate, so it can only increase the limited luminous efficiency

To make such a structure, there are currently two methods. The first is a two-stage epitaxial method, that is, the epitaxial light-emitting layer 134 and the current blocking structure are sequentially formed, and the current blocking structure is taken out of the epitaxial cavity. The etching step is to form the n-type current blocking structure 140, and then put the wafer back into the epitaxy chamber to grow the light-transmitting current spreading layer 136. In this way, the epitaxy chamber is easily polluted and affects future epitaxy. quality; the second approach is to use selective regional diffusion, which, while simpler and less expensive, is less controllable

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