Detection method of dynamic micronic dust in etching reaction chamber

Abstract

A detecting method for the state of micro-dust pollution features that a photoresistive control piece put on the etching machine is transported to the main etch room. With the plasma source being started, the procedure for etching the photoresistive layer of the control piece is carried out. Then, the number of microparticles on the control piece etched is determined, in order to judge the state of the etching machine.

Description

technical field [0001] The invention relates to a method for detecting the state of an etching machine, and in particular to a method for detecting the state of dynamic fine dust pollution in an etching reaction chamber. Background technique [0002] The etching process can be said to be one of the most important steps in the entire semiconductor process. Generally speaking, the device pattern on the photomask is firstly transferred to the photoresist by a lithography process. Then, the etching process is used to complete the final purpose of transferring the entire pattern to the film. This lithographic and etched film will become part of the semiconductor device. Taking the manufacturing process of MOS or CMOS as an example, this layer of film may be silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), polycrystalline silicon (Poly-Si), aluminum alloy (Al Alloy) or phosphosilicate glass (Phosphosilicate, PSG), etc. That is to say, almost the main materials of semic...

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Problems solved by technology

However, it takes at least half a day before the product is in the etching reaction chamber to carry out the etching process when it is detected that there is a problem with the product, and it takes half a day to inspect the dust after the shutdown. Therefore, the known method cannot respond in real time. The condition of the etching reaction chamber, and it is easy to affect the performance of the process and the pass rate of the product

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