Light emitting diodes and producing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of time-consuming work process, increased production cost expenditure, and limited light-gathering effect, achieving low manufacturing cost and simple manufacturing process , good light-gathering effect

Inactive Publication Date: 2006-06-21
CHANG GUNG UNIVERSITY
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  • Abstract
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Problems solved by technology

[0006] However, this light-emitting diode has no effect of increasing brightness, and in order to achieve the light-gathering effect, it must be packaged and formed a spherical condenser lens on the top surface of the light-emitting diode, which not only consumes time in the work process, but also improves The expenditure on production costs, what's more, the concentrating effect it can achieve is extremely limited

Method used

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  • Light emitting diodes and producing method thereof
  • Light emitting diodes and producing method thereof
  • Light emitting diodes and producing method thereof

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Embodiment Construction

[0039] First, see figure 1 The block diagram of the wet oxidation process is shown, which firstly cleans the wafer subjected to wet oxidation treatment, then vapor-deposits the wafer with a P-type electrode (hereinafter referred to as the front electrode), and causes the front electrode to be exposed, developed, and peeled off from the front electrode. Thermal tempering, the wafer is ground, and the front electrode is evaporated and thermally tempered, and then the wafer is micro-cut. After the wet oxidation operation is applied to form an insulating layer that prevents the flow of current, the wafer is finally cut. .

[0040] For the detailed wet oxidation process method, please refer to figure 2 Flow chart of the wet oxidation process shown. The manufacturing method of the light-emitting diode of the present invention mainly includes an active layer 12 on the base layer 11 of the epitaxial structure 10, a first Bragg reflection layer 13 between the active layer 12 and the...

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Abstract

This invention opens a light emission diode and manufacturing method, it mainly utilized wet oxidation technology, oxidates the distributed bragg reflectors in the diode structure to restrict the current conduction in diode, further restricts the current in special area, makes the light emission area concentrating, then through the position of face pole and shape design, makes the emiting crystal light not being obstructed from face pole, further makes the brightness of light emission diode promoted, the light projected has better concentrating effect.

Description

technical field [0001] The invention relates to a light-emitting diode and its manufacturing method, in particular to a light-emitting diode mainly manufactured and designed by wet oxidation technology. Background technique [0002] Light-emitting diodes (Light-Emitting Diodes, referred to as LEDs) have been researched and developed for more than 40 years since 1960. From traditional LEDs to current high-brightness LEDs, the application of LEDs in life has a very close relationship with us. Close yes. For example: traffic lights, car lights, outdoor large full-color display panels, and display lights that will be used in lighting in the future. However, while the current epitaxy technology can increase the internal quantum efficiency (internal quantum efficiency) to 90% or even higher, the external quantum efficiency (external quantum efficiency) of high-brightness LEDs is only 10% or lower; therefore, how to It is a very important subject to improve the brightness of LEDs...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 林瑞明
Owner CHANG GUNG UNIVERSITY
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