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Memory capacitor for thin film transistor LCD and process for making same

A liquid crystal display and storage capacitor technology, which is applied to static indicators, photo-engraving processes of pattern surfaces, instruments, etc., can solve the problems of reduction of aperture ratio, image display effect and quality impact, etc., to increase aperture ratio and improve display. Effect and quality, effect of increasing permittivity

Inactive Publication Date: 2006-09-13
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for thin film transistor liquid crystal displays, increasing the area of ​​the storage capacitor will inevitably lead to a decrease in the aperture ratio of the pixel (pixel), thus affecting the display effect and quality of the image.

Method used

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  • Memory capacitor for thin film transistor LCD and process for making same
  • Memory capacitor for thin film transistor LCD and process for making same
  • Memory capacitor for thin film transistor LCD and process for making same

Examples

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Effect test

no. 1 example

[0039] When the present invention is applied to the storage capacitor of manufacturing amorphous silicon thin film transistor liquid crystal display, please see Figure 1A to Figure 1C .

[0040] Figure 1A to Figure 1C It is a schematic side view of the manufacturing process of the storage capacitor of the amorphous silicon thin film transistor liquid crystal display according to a first embodiment of the present invention. This embodiment can simultaneously manufacture an amorphous silicon thin film transistor on a substrate.

[0041] Please refer to Figure 1A Firstly, a first patterned metal layer is formed on the surface of the substrate 100 as the gate 102 of the amorphous silicon thin film transistor 110 , and then an insulating layer 104 is formed to cover the substrate 100 and the gate 102 thereon. Then, a channel layer 106 is formed on the insulating layer 104 across the gate 102 . After that, a second patterned metal layer including the source / drain 108 of the amor...

no. 2 example

[0046] When the present invention is applied to the storage capacitance of manufacturing polysilicon thin film transistor liquid crystal display, please see Figure 2A to Figure 2D .

[0047] Figure 2A to Figure 2D It is a schematic side view of the manufacturing process of the storage capacitor of the polysilicon thin film transistor liquid crystal display according to a second embodiment of the present invention. A polysilicon thin film transistor can be fabricated on a substrate at the same time.

[0048] Please refer to Figure 2A First, an island-shaped polysilicon (poly-island) layer 202 is formed on the substrate 200 , and then an insulating layer 206 is formed to cover the substrate 200 and the island-shaped polysilicon layer 202 thereon. After that, a first patterned metal layer is formed on the substrate 200 , including the gate 204 formed on the island-shaped polysilicon layer 202 and the lower electrode 214 adjacent to the island-shaped polysilicon layer 202 . ...

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PUM

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Abstract

The invention is a storage capacitance of film transistor LCD and making method. Its structure includes a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer, where the dielectric layer includes the first part between the lower and upper electrodes, and the second part, the thickness of the first part is less than that of the second part and greater than the tolerable disruptive thickness of the dielectric layer. It can reduce the thickness of the dielectric layer between the electrodes and synchronously increases capacitivity of storage capacitance and aperture ratio of pixel.

Description

technical field [0001] The present invention relates to a thin film transistor liquid crystal display (TFT-LCD) component and a manufacturing method thereof, and in particular to a storage capacity of a thin film transistor liquid crystal display (TFT-LCD) and a manufacturing method thereof. Background technique [0002] With the development of high technology, video products, especially digital video or image devices have become common products in daily life. In these digital video or image devices, the display is an important component to display relevant information. Users can read information from the display, or further control the operation of the device. Moreover, in order to match the mode of modern life, the volume of video or image devices tends to be thinner and lighter day by day. Although the traditional cathode ray tube (cathoderay tube, CRT for short) still has its advantages, it needs to occupy a large volume and consumes power. Therefore, in conjunction w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/133G02F1/136G02F1/1343G03F7/00
Inventor 叶光兆张志清
Owner AU OPTRONICS CORP