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A method of substrate processing and photoresist exposure

A technology of photoresist and photoresist layer, applied in the field of photoresist exposure, can solve the problems of inaccurate exposure of photoresist layer, inaccurate shape and size, etc.

Inactive Publication Date: 2006-10-18
INTEL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, the light is out of focus at the top and bottom points, resulting in inaccurate exposure of the photoresist layer
Inaccurate exposure of the photoresist layer leads to inaccurate feature size etched in layers below the photoresist layer

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  • A method of substrate processing and photoresist exposure
  • A method of substrate processing and photoresist exposure
  • A method of substrate processing and photoresist exposure

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Embodiment Construction

[0031] This paper describes a method for improving the exposure focus of modern steppers, which are used in the lithography of semiconductor substrates such as wafers. Wafers are sawed from a semiconductor ingot in a specific direction relative to a reference point on the ingot. As a result of sawing, a series of convex and concave features appear on the wafer surface. After many layers have been added to the wafer and the photoresist layer is ready to be removed, the wafer is aligned with the stepper so that the dynamic focus area of ​​the stepper is aligned with the pattern and / or sawing direction. Such alignment improves critical dimension control and reduces variability in printing small geometric features during lithography, resulting in higher throughput.

[0032] Referring initially to FIG. 1 , a single crystal silicon ingot 20 is illustrated. The ingot 20 is cylindrical with a radius 22 , a length along a central axis 24 , two ends 26 and a notch groove 28 . The cen...

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Abstract

The present invention discloses a method for improving exposure focus of modern steppers used in photolithography of semiconductor substrates such as wafers. Wafers (52) are sawn from the semiconductor ingot in a particular direction (50) relative to a reference point on the ingot. As a result of sawing, a series of convex and concave features (62) appear on the surface (54) of the wafer. After many layers have been added to the wafer and the photoresist layer is ready to be removed, the wafer is aligned with the stepper so that the dynamic focus area of ​​the stepper is aligned with the pattern and / or sawing direction. Such alignment improves critical dimension control and reduces variability in printing small geometric features during lithography, resulting in higher throughput.

Description

technical field [0001] The present invention relates generally to substrate processing methods, and more particularly to photoresist exposure methods. Background technique [0002] Integrated circuits are fabricated on silicon and other semiconductor substrates, usually in wafer form. Wafers are obtained by pulling silicon ingots out of liquid silicon and sawing them into many wafers. Then, a number of layers are formed on the wafer, followed by a photoresist layer. Then, a mask having openings therein is placed over the photoresist layer, and a light source is placed over the mask so that light shines through the openings onto selected regions of the photoresist layer. These selected areas change chemical composition and are subsequently etched selectively over unexposed areas of the photoresist layer. Then, using the photoresist layer as a mask, the layers below the photoresist layer are etched. [0003] The cutting edges of the wires used to saw the wafers form a seri...

Claims

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Application Information

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IPC IPC(8): G03F7/20G03F9/00
CPCG03F7/70425G03F9/7023G03F9/7026
Inventor 迈赫兰·阿明扎德迈克尔·费伊
Owner INTEL CORP
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