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Small gap non-binding electrostatic sealing process for sensor

A small gap, sensor technology, applied in the direction of circuits, relays, electric switches, etc., can solve problems such as adhesion, achieve high connection strength, reliable long-term stability, and good air tightness

Inactive Publication Date: 2007-03-28
SHENYANG ACAD OF INSTR SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a small gap non-adhesive electrostatic sealing method for sensors to solve the problem of adhesion after electrostatic sealing of sensor sensitive devices with small gaps

Method used

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  • Small gap non-binding electrostatic sealing process for sensor
  • Small gap non-binding electrostatic sealing process for sensor

Examples

Experimental program
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Effect test

Embodiment 3

[0021] Embodiment 3, as shown in Figure 6: in this example, each part is arranged in the order of 1-3 as example 1, and the power connection method is also the same as the above-mentioned example 1, and it is characterized in that the perforated glass 2 ` adopts Structure, in order to make the electrode layer 5 located in the middle of the porous glass 2' connect to the negative electrode, add a spacer 6 between the porous glass 2' and the heating plate 3, so that there is a gap between 2' and 3 to introduce the potential Line 7 is exported. The conductive spacer 6 is made of conductive material, such as metal or silicon. The porous glass 2' is connected to the negative electrode through the heating plate 3 and the spacer 6. Fig. 7 shows the top view of perforated glass 2 ' in example 3; It is characterized in that perforated glass 2 ' has a hole in the center of the plane, and there are metal electrode layers 5 formed by sputtering process on the upper and lower sides, and t...

Embodiment 4

[0022] Embodiment 4 As shown in FIG. 8, the sequence of parts and power connection are the same as the above-mentioned Example 3, but the film area of ​​the silicon chip 1 can be on the surface of the device, such as piezoresistive acceleration sensors and capacitive acceleration sensors.

[0023] The metal electrode layer 5 is fabricated on the surface of the glass or perforated glass by sputtering process, and then the electrode layer is processed into the electrode connection line 8 connected with the edge pads by the photoetching process.

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Abstract

The sealing technology, when processing the positive potential of the sealing voltage is to be applied on the silicon material and glass electrode, the negative potential of the sealing voltage is to be on the glass. Applying the isomeric etch technology, the silicon crystal material is processed with the frame, thin area and movable mass block. Applying sputtering technology the metallic electrode layer is formed on the glass and applying photoetch technology the electropolar layer is processed to connect with the edge of the joinint point.

Description

[0001] Technical field The present invention relates to the technical field of sensor manufacturing, a small gap non-adhesive electrostatic sealing method. Background technique [0002] Electrostatic sealing is also known as field-assisted bonding or anodic bonding. It can bond glass to metals, alloys or semiconductors without any adhesives. This kind of bonding temperature is low, the bonding interface is firm, and the long-term stability is good, which is the key process of sensor and integrated circuit manufacturing technology. The sealing process is shown in schematic diagram 1. The silicon wafer 1 to be bonded is connected to the positive pole of the power supply, and the glass 2 is connected to the negative pole, with a voltage of 500~1000V. Heat the glass-silicon wafer to 300~500°C. When the voltage is applied, the Na in the glass + It will drift toward the negative electrode, and a depletion layer will be formed on the glass surface next to the silicon wafer, and th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00B81B5/00H05K13/00
Inventor 张治国李颖
Owner SHENYANG ACAD OF INSTR SCI
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