Plasma processing device with very-high frequency parallel resonance antenna

Abstract

Disclosed is a plasma process apparatus in which a semiconductor device manufacturing process using a plasma is performed. The apparatus includes: a vacuum chamber in which a semiconductor device manufacturing process is performed; a very high frequency (VHF) power source for generating a VHF power; a VHF parallel resonance antenna having a plurality of antenna coils connected in parallel to each other, and multiple variable capacitors insertion-installed in series in the antenna coils, the antenna being installed at an outer upper portion of the vacuum chamber, and supplied with the VHF power from the VHF power source; and an impedance matching box for impedance matching between the VHF power and the VHF parallel resonance antenna. Preferably, the variable capacitor is a coaxial capacitor including: a first insulator tube; first two metal tubes respectively extending from both ends of the first insulator tube; a second insulator tube surrounding the first insulator tube, and partially surrounding the first two metal tubes placed adjacent to both sides thereof; and a second metal tube surrounding the second insulator tube, and installed so as to glide along an outer side surface of the second insulator tube.

Description

field of invention [0001] The present invention relates to plasma processing equipment, and more particularly, to inductively coupled plasma processing equipment with very high frequency parallel resonant antennas. Background technique [0002] In the manufacturing process of a semiconductor device, a process using plasma is often performed. Dry etching, chemical vapor deposition (CVD) and sputtering are examples of these processes. To reconsider the efficiency of these processes, ion concentrations of 1 × 10 11 ~2×10 11 ion / cm 3 high density plasma (HDP). It is known that such high density plasmas can be obtained by inductively coupled plasma (ICP). [0003] Figure 1a is a schematic diagram showing a conventional inductively coupled plasma processing apparatus. [0004] Referring to FIG. 1 a , a wafer chuck 20 is placed in the vacuum chamber 10 . Wafer 30 is loaded on wafer chuck 20 . The vacuum chamber 10 has a gas injection hole 12 and a gas discharge hole 14 . T...

AI Technical Summary

Problems solved by technology

However, products made of conventional variable capacitors used as the resonance capacitor C3 have a capacitance of 5pF or more, so the desired resonance in the RF region of 20MHz to 300MHz cannot be actually produced.

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