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Method and apparatus for measurement, and method and apparatus for exposure

An exposure method and measurement technology, which is applied in the direction of photolithography exposure device, measurement device, microlithography exposure equipment, etc., can solve the problem of high-precision measurement of the concentration of light-absorbing substances in the optical path space, confirmation of measurement results, and measurement High value and other problems, to achieve the effect of stable exposure processing

Inactive Publication Date: 2003-05-28
NIKON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As mentioned above, in the state where oxygen remains in the measuring device, the measured value is higher than the real value, so even if the optical path space is quickly purged with an inert gas and the real oxygen concentration is reduced to a low concentration of several ppm or less, The measuring device also shows the measurement result of high concentration, so the measurement result cannot be confirmed with high accuracy
Therefore, it is impossible to measure the concentration of light-absorbing substances in the optical path space with high precision, and not only the overall work efficiency of the exposure process is reduced, but also expensive purge gas is wasted, resulting in an increase in cost.

Method used

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  • Method and apparatus for measurement, and method and apparatus for exposure
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  • Method and apparatus for measurement, and method and apparatus for exposure

Examples

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Embodiment 1

[0032] Next, a measurement method, a measurement device, an exposure method, and an exposure device according to one embodiment of the present invention will be described with reference to the drawings. figure 1 It is a structural diagram showing Example 1 of the exposure apparatus provided with the measuring apparatus of the present invention, figure 2 It is a configuration diagram for explaining the measurement device and the gas replacement device.

[0033] exist figure 1 , figure 2 Among them, the exposure device S has: an exposure device main body E that irradiates exposure light EL on the mask MS to copy the image of the pattern formed on the mask MS onto the substrate P; A specific gas (inert gas) GT1 is supplied to the optical path space LS through which the light EL passes, and a gas replacement device (light-absorbing substance reducing device) R for reducing light-absorbing substances in the optical path space LS. The exposure apparatus S further has a measur...

Embodiment 2

[0113] Next, Embodiment 2 of the measurement apparatus and exposure apparatus of the present invention will be described with reference to FIG. 5 . Here, the same reference numerals are assigned to the same or equivalent components as those in the first embodiment described above, and description thereof will be simplified or omitted.

[0114] In FIG. 5 , the exposure device S has: a gas replacement device R that reduces light-absorbing substances in the optical path space LS; a measurement unit M that can measure light-absorbing substances; and a gas supply that can supply the gas GS in the optical path space LS to the measurement unit M. Device N; a clean gas supply device H capable of supplying clean gas GT2 to the measurement part M; a switching device B capable of switching the gas supply from the gas supply device N and the clean gas supply device H to the measurement part M respectively; capable of heating connection In the clean gas supply device H, the inert gas stora...

Embodiment 3

[0122] Below, refer to Figure 6 Embodiment 3 of the measuring device of the present invention will be described. Here, the same reference numerals are used for the same or equivalent components as those in the first and second embodiments described above, and their descriptions are simplified or omitted.

[0123] The measuring device A has: a measuring part M capable of measuring an arbitrary substance contained in a predetermined gas GS supplied from the optical path space LS; a predetermined gas supply device N capable of supplying the predetermined gas GS to the measuring part M; A clean gas supply device H that supplies clean gas GT2 with a reduced concentration of an arbitrary substance to the measurement part M; a switching device B that can switch the gas supply to the measurement part M from the given gas supply device N and the clean gas supply device H respectively (for example, a three-way valve); the control device CONT that makes the switching device B work. In...

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PUM

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Abstract

An object is to provide a measuring method and a measuring apparatus having excellent working efficiency, which can measure an optional substance contained in a predetermined gas accurately and promptly, and an exposure method and an exposure apparatus. An exposure apparatus S comprises; a measuring section M capable of measuring an absorptive substance, a gas supply unit N which can supply a gas GS in an optical path space LS to the measuring section M, a clean gas supply unit H which can supply a clean gas GT2 in which the absorptive substance has been reduced, to the measuring section M, and a switchover device B which can switch the supply of the gas GS and the clean gas GT2, to the measuring section M. Measurement of the concentration of the absorptive substance contained in the gas GS is performed accurately in a state where the residual absorptive substance in the measuring section M is reduced.

Description

technical field [0001] The present invention relates to a measurement method and a measurement device for measuring an arbitrary substance contained in a predetermined gas, and an exposure method and an exposure device. [0002] This application is based on Japanese Patent Application (Japanese Patent Application No. 2000-99650), and the content thereof is incorporated into this specification. Background technique [0003] Conventionally, when manufacturing semiconductor elements, thin-film magnetic heads, liquid crystal display elements, etc. by photolithography steps, various exposure apparatuses have been used. This exposure device projects an image of a pattern formed on a photomask or a grid (hereinafter referred to as "mask") to a substrate coated with a photosensitive agent such as photoresist on the surface through a projection optical system. In recent years, along with the miniaturization of the shape of the pattern of the projection area projected on the substrat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/35G03F7/20
CPCG01N21/3504G03F7/70883G03F7/70933
Inventor 长坂博之青木贵史
Owner NIKON CORP
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