Method and appts. for varying magnetic field to control volume of plasma

Abstract

A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and further includes a plasma confinement arrangement. The plasma confinement arrangement includes a magnetic array disposed around the periphery of the process chamber configured to produce a magnetic field which establishes a cusp pattern on the wall of the chamber. The cusp pattern on the wall of the chamber defines areas where a plasma might damage or create cleaning problems. The cusp pattern is shifted to improve operation of the substrate processing system and to reduce the damage and / or cleaning problems caused by the plasma's interaction with the wall. Shifting of the cusp pattern can be accomplished by either moving the magnetic array or by moving the chamber wall. Movement of either component may be continuous (that is, spinning one or more magnet elements or all or part of the wall) or incremental (that is, periodically shifting the position of one or more magnet elements or all or part of the wall).

Description

Background of the invention [0001] The present invention relates to methods and apparatus for processing substrates such as semiconductor substrates used in the manufacture of integrated circuits (ICs) or glass plates used in flat panel displays. More specifically, the present invention relates to a method of controlling a plasma within a plasma processing chamber. [0002] Plasma processing systems have been available for many years. Plasma processing systems utilizing inductively coupled plasma sources, electron cyclotron resonance (ECR) sources, capacitive sources, etc. have been introduced to various degrees for processing semiconductor substrates and glass sheets over the years. [0003] During processing, multiple deposition and / or etch steps are typically used. During deposition, various materials are deposited onto the surface of a substrate such as glass or a semiconductor wafer. For example, such as SiO can be formed on the surface of the substrate 2 deposition l...

AI Technical Summary

Problems solved by technology

Increased power density leads to higher electron temperatures in the plasma and consequently to possible damage to the substrate and chamber

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