Single photon detector with high counting rate

A single-photon detector and high counting rate technology, which is applied in semiconductor devices, radiation intensity measurement, electromagnetic wave transmission systems, etc., can solve the problems of counting rate reduction, detector performance degradation, single photon signal loss, etc., and achieve high counting rate , Easy to operate, control simple effects

Inactive Publication Date: 2004-03-17
EAST CHINA NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The shortcoming of this single-photon detector circuit is that the shortest time interval between the adjacent avalanche signals produced by single-photon detection is too long, that is, the recovery time (dead time) between two avalanche diodes of the avalanche diode 2 is too long, resulting in recovery Loss of single-photon signal within a short period of time, reduced count rate, degraded detector performance

Method used

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  • Single photon detector with high counting rate
  • Single photon detector with high counting rate
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Embodiment 1

[0024] Embodiment 1 The circuit of this embodiment is shown in Figure 7 , wherein, the output voltage of the DC power supply 1 includes +240V, +15V, +5V, -5V, -5.2V, -15V, so as to provide the working voltage for the avalanche diode 2, the signal processing circuit 8 and the control circuit 9 respectively, and the avalanche diode 2 is a silicon avalanche diode of the type C30902S produced by EG&G. The resistance of the current limiting resistor 3 is 220kΩ, the resistance of the output resistor 4 is 1kΩ, the capacity of the distributed capacitor 5 is estimated to be 2pf, and the monostable multivibrator 90 The models of , 91 are both MC74HC4538A, the resistance value of the adjustable resistor 74 is 470Ω, the resistance value of the resistor 73 is 200Ω, the model of the transistor 70 is 3DK87, the model of the Zener diode 71 is 1N5819, and the resistance value of the resistor 72 is 1kΩ, The resistance values ​​of the adjustable resistors 903 and 913 are both 20kΩ, the capaciti...

Embodiment 2

[0025] Embodiment 2 The circuit of this embodiment is shown in Figure 8. This embodiment is identical to Embodiment 1 except for the following differences: the models of the monostable multivibrator 90 and 91 are both MC10198, the models of the level conversion circuits 905 and 915 are respectively MC10124 and MC10H125, and the MC10124 is a TTL -ECL level conversion chip, MC10H125 is an ECL-TTL level conversion chip with a maximum count rate of 5MHZ.

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Abstract

A high enumeration rate single photon detector characterized by that, in the existing single photon detector circuit an active quick-speed recovery circuit is arranged comprising an electronic switchand a control circuit, the electronic switch is connected between the anode and the earth terminal of the snow slide diode for controlling the start and stop of the electronic switch. During the recovery time, the control circuit exports a positive pulse, making the electronic switch conducting, the node capacitor and the distributed capacitor of the avalanche diode are quickly charged to Va and discharged to 0 volt respectively through the small resistance electronic switch.

Description

technical field [0001] The invention relates to a single-photon detector with high counting rate, which realizes the increase of the counting rate of the single-photon detector from hundreds of thousands to several megabytes, and belongs to the technical field of quantum secret communication. Background technique [0002] In quantum secure communication, information is transmitted by loading on a single photon, and an avalanche diode (APD) is a single photon detection device. The performance of the single photon detector is the key to determine the operating range, error rate and other indicators of quantum secure communication. figure 1 It shows an existing single photon detector circuit, the avalanche diode 2 is in the reverse Geiger mode, that is, the output voltage Va of the DC power supply 1 is greater than the avalanche voltage V of the avalanche diode 2 latch Work, the current-limiting resistor 3, the output resistor 4 and the avalanche diode 2 ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01T1/17G01T1/24H01L31/02H04B10/071
Inventor 秦小林周春源李和祥丁良恩曾和平
Owner EAST CHINA NORMAL UNIV
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