Semiconductor memory apparatus and data write method

Abstract

A semiconductor memory device including a plurality of memory cells is provided. One of the plurality of memory cells includes a variable resistor having a resistance value thereof reversibly changed in accordance with a voltage applied thereto, and a transistor connected to the variable resistor.

Description

technical field [0001] The present invention relates to a semiconductor memory device and a data writing method, and in particular to a semiconductor memory device including a plurality of memory cells and a method for writing data to such a semiconductor memory device. Background technique [0002] Recently, semiconductor memory devices such as nonvolatile memories have been significantly improved in performance such as degree of integration, data processing rate, and the like. In particular, flash memory, as a nonvolatile memory, is widely used in dense information devices such as personal terminals such as cellular phones. Flash memory is a type of EEPROM (Electrically Erasable Programmable Read Only Memory). Flash memory includes a plurality of memory cells. Each memory cell includes a MOS transistor with a floating gate that is electrically isolated from other elements in the memory cell. [0003] Figure 8 is a schematic cross-sectional view of a memory cell 100 inc...

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Problems solved by technology

Therefore, using the above method to write data into each memory cell of the flash memory will significantly prolong the time required to complete the data write operation (programming)

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