Method of writing data on a storage device using a probe technique
一种存储装置、探针的技术,应用在写数据领域,能够解决激光二极管无法被安置在同一空间、磁写头与写介质间隙窄等问题
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[0037] The present invention will now be described more fully with reference to the accompanying drawings, in which an exemplary embodiment of the invention is shown. In the drawings, the thickness of layers or regions may be exaggerated for clarity.
[0038] Refer to attached figure 1 , reference numeral 48 denotes a ferroelectric layer used as a data writing medium. Although the ferroelectric layer 48 is preferably a PZT layer, other ferroelectric layers can be used, such as a BaTiO 3 (BTO) layer, a triglycine sulfate (TGS) layer, or a triglycine selenate (TGSe) layer. Lowering electrode 50 is disposed on the lower surface of ferroelectric layer 48 . For writing data, a third voltage V3 is applied to lower electrode 50 . Probe 40 is positioned over ferroelectric layer 48 . The probe 40 is positioned at the end of a cantilever (not shown) that is connected to a power source (not shown). The probe 40 includes a plate portion 42 connected to the cantilever, and a protrudi...
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