Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of writing data on a storage device using a probe technique

一种存储装置、探针的技术,应用在写数据领域,能够解决激光二极管无法被安置在同一空间、磁写头与写介质间隙窄等问题

Inactive Publication Date: 2005-04-06
SAMSUNG ELECTRONICS CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the coils used to generate the magnetic field and the laser diodes used for heating cannot be placed in the same space
In addition, due to the narrow gap between the magnetic write head and the writing medium, it is almost impossible to apply a magnetic field and heat at the same time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of writing data on a storage device using a probe technique
  • Method of writing data on a storage device using a probe technique
  • Method of writing data on a storage device using a probe technique

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The present invention will now be described more fully with reference to the accompanying drawings, in which an exemplary embodiment of the invention is shown. In the drawings, the thickness of layers or regions may be exaggerated for clarity.

[0038] Refer to attached figure 1 , reference numeral 48 denotes a ferroelectric layer used as a data writing medium. Although the ferroelectric layer 48 is preferably a PZT layer, other ferroelectric layers can be used, such as a BaTiO 3 (BTO) layer, a triglycine sulfate (TGS) layer, or a triglycine selenate (TGSe) layer. Lowering electrode 50 is disposed on the lower surface of ferroelectric layer 48 . For writing data, a third voltage V3 is applied to lower electrode 50 . Probe 40 is positioned over ferroelectric layer 48 . The probe 40 is positioned at the end of a cantilever (not shown) that is connected to a power source (not shown). The probe 40 includes a plate portion 42 connected to the cantilever, and a protrudi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, a heat and electric field are applied at the same time to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.

Description

technical field [0001] The invention relates to a method for writing data, in particular to a method for writing data on a ferroelectric layer by using a resistive probe. Background technique [0002] With the development of Internet-related technologies, writing media capable of writing a large amount of data including moving images (hereinafter referred to as "high-density writing media") and writing media for writing data on writing media and reading written data Portable devices, as important products in the writing media market, have received considerable attention in recent stages. [0003] The portable non-volatile data writing device can be classified into a solid-state storage device like a flash memory, or a magnetic disk type storage device like a hard disk. [0004] It can be expected that within a few years, the demand for basic capacity of handheld devices will reach the level of tens of gigabytes of capacity. For solid-state storage devices, it is conceivabl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11B9/14G11B9/00G11B9/02G11B13/00
CPCG11B2005/0021G11B9/02G11B9/149G11B9/14B82Y10/00G11B13/00G11B9/1409
Inventor 洪承范金成栋丁柱焕闵桐基朴弘植白庚录朴哲民金鈗锡
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products