Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus using deflector

Abstract

A deflector which makes multilayered wiring possible and prevents contamination during the manufacture includes an electrode substrate (400) having a plurality of through holes, and an electrode pair made up of first and second electrodes which oppose the side walls of each through hole in order to control the locus of a charged particle beam passing through the through hole, and a wiring substrate (500) having connection wiring pads connected to the electrode pairs of the electrode substrate to individually apply voltages to the electrode pairs. This deflector is formed by bonding the electrode substrate and wiring substrate via the connection wiring pads of the wiring substrate.

Description

technical field [0001] The present invention mainly relates to techniques applicable to charged particle beam exposure devices such as electron beam exposure devices and ion beam exposure devices used for exposure of semiconductor integrated circuits, and in particular, relates to pattern drawing using a plurality of charged particle beams. The deflection technology that can be applied in the charged particle beam exposure device and the charged particle beam exposure device using the deflection technology, etc. Background technique [0002] In the production of semiconductor devices, electron beam lithography technology is attracting attention as a powerful technology for etching that can perform fine pattern exposure of 0.1 μm or less. There are several methods for this etching, but there are problems to be solved in each method. For example, there is a so-called "variable rectangular beam method" that can draw a pattern with one stroke. However, the variable rectangular...

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Problems solved by technology

as from image 3 As can be seen, in the wiring removal direction ( image 3 In the case of Y direction), as the number of wiring increases away from the center of the device, it is difficult to blank to thousands of units when the pitch between blankers is kept constant (for example: 100μm) Issues such as electrode wiring

[0007] In addition, there is also the issue of pollution in the processing line

Since many wirings are arranged on the blanking electrodes, the wiring design rule becomes sub- The unit of micron requires a processing device of a semiconductor LSI production line, but in the semiconductor processing line, in order to avoid heavy metal contamination, it is impossible to put the above-mentioned MEMS substrate produced by the MEMS processing line into the semiconductor processing line. Issues arising from constraints

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