Magnetron cathode and magnetron sputtering apparatus comprising the same

A magnetron cathode and magnetron sputtering technology, which is applied to the cathode of transit time electron tubes, sputter coating, discharge tubes, etc., can solve the problems of high corrosion degree, unbalanced corrosion profile, target corrosion, etc.

Inactive Publication Date: 2004-09-01
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
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Problems solved by technology

In this corroded region, the degree of corrosion is higher than in other regions of the target, resulting in an uneven corrosion profile
[0016] In the existing sputtering method requiring low line width (0.14 μm or lower) and high aspect ratio (5:1 or higher), this magnetron cathode technology has the following problems: non-uniform deposition occurs; Poor film uniformity, target corrosion occurs locally, thus reducing the efficiency of the materials used

Method used

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  • Magnetron cathode and magnetron sputtering apparatus comprising the same
  • Magnetron cathode and magnetron sputtering apparatus comprising the same
  • Magnetron cathode and magnetron sputtering apparatus comprising the same

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Embodiment Construction

[0047] Hereinafter, a magnetron cathode and a magnetron sputtering apparatus including the magnetron cathode according to the present invention will be described in detail with reference to the accompanying drawings.

[0048] Fig. 5 is a schematic cross-sectional view of a magnetron cathode according to the present invention.

[0049]Referring to FIG. 5, a magnetron cathode according to the present invention includes three or more magnet units, each magnet unit includes a single or a plurality of magnets, and the same magnetic pole of these magnets faces the target. Opposite poles of adjacent magnet units face the target. One magnet unit is arranged around the periphery of the other magnet unit. For example, as shown in Figure 5, the first magnet unit 35a is arranged in the innermost region with the S pole facing the target, and the second magnet unit 35b is arranged around the periphery of the first magnet unit 35a with the N pole facing the target, so that The third magnet...

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Abstract

A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, wherein one magnet unit is disposed around the outer circumference of another magnet unit and adjacent magnet units have opposite poles facing toward the same direction. Uniform magnetic field distribution is obtained. Therefore, the erosion profile of a target is wide and uniform.

Description

technical field [0001] The present invention relates to a magnetron sputtering apparatus, and more particularly, the present invention relates to a magnetron sputtering apparatus having improvements in deposition rate and film uniformity. Background technique [0002] In general, physical vapor deposition (PVD) and chemical vapor deposition (CVD) are widely used for deposition of small-thickness films. CVD is a process that uses chemical reactions to form thin films with desired physical properties. PVD is a process of forming a thin film by imparting momentum to a target material so that the target material shoots toward a substrate. [0003] PVD can be roughly divided into magnetron sputtering and evaporation. Evaporation is a method of heating a solid or liquid to break it down into molecules or atoms; then solidifying them on the surface of a substrate. Since the evaporation apparatus has a simple structure and can easily employ a large amount of evaporation materials...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317C23C14/35H01J37/34H01L21/285H01L21/31
CPCH01J37/3408C23C14/35H01J37/317
Inventor 瑟吉·Y·纳瓦拉尤里·N·托尔马彻夫马东俊金泰完
Owner SAMSUNG ELECTRONICS CO LTD
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