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Method and structure for producing contact window

A manufacturing method and contact window technology, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of indium tin oxide film peeling and high cost

Inactive Publication Date: 2004-09-22
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a method of manufacturing a contact window and its structure to solve the known problem that the metal layer under the contact window is in direct contact with the indium tin oxide film, which will cause its own redox reaction and cause the indium tin oxide film to peel off. question
[0006] Another object of the present invention is to provide a method for manufacturing a contact window and its structure, so as to improve the disadvantages of the high cost of the known method for solving the peeling off of the indium tin oxide film

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  • Method and structure for producing contact window
  • Method and structure for producing contact window
  • Method and structure for producing contact window

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Embodiment Construction

[0043] The present invention forms a conductive nanoparticle layer at the bottom of the contact window, which can solve the known problem that the indium tin oxide film is peeled off due to the self-redox reaction caused by the direct contact between the metal layer under the contact window and the indium tin oxide film. Several embodiments are given below to describe in detail.

[0044] Figure 1A to Figure 1D is a schematic cross-sectional view of the manufacturing process of the contact window according to a preferred embodiment of the present invention. Please refer to Figure 1A , first provide a substrate 100, wherein a conductive layer 102 has been formed on the substrate 100, and a dielectric layer 104 has been formed on the conductive layer 102, and a contact window opening 106 has been formed in the dielectric layer 104, exposing the conductive layer 102 .

[0045] If the present invention is applied in the manufacturing process of thin film transistor liquid cryst...

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Abstract

A manufacturing method for contact window and its structure, first a base plate is provided, a first conducting layer was formed on the base plate,a dielectric layer formed on the first conducting layer, and an opening of contact window formed in the dielectric layer, the first conducting layer is exposed. The next, an electric conduction nanometer particle layer is formed on the surface of the exposed first conducting layer. Then, a second conducting layer is formed inside the opening of conducting window, which covers the electric nanometer particle layer to form a contact window. At the bottom of contact window, an electric nanometer particle layer is formed to prevent the second conducting layer from producing stripping. The production cost of this method is lower than the known method.

Description

technical field [0001] The present invention relates to a manufacturing method and structure of a semiconductor element, and in particular to a manufacturing method and structure of a contact window. Background technique [0002] In the manufacturing process of liquid crystal displays, in order to electrically connect the conductive layers above and below the insulating layer, contact window openings are generally formed in the insulating layer by lithography and etching processes, so that the conductive layers above and below the insulating layer The conductive layer can be turned on. For example, the method for electrically connecting the pixel electrode in the pixel structure with the drain of the thin film transistor is to form a contact window opening in the dielectric layer using a lithography etching process before forming the pixel electrode, exposing the underlying drain. After the electrode is formed, the pixel electrode is plated, so that the opening of the conta...

Claims

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Application Information

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IPC IPC(8): G02F1/133H01L21/28H01L21/30H01L21/768
Inventor 陈东佑来汉中
Owner AU OPTRONICS CORP