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Method of providing stability of a magnetic memory cell

A storage unit and magnetic stability technology, applied in information storage, static memory, digital storage information, etc., can solve problems such as MRAM storage units that cannot be too stable

Inactive Publication Date: 2005-01-26
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, the stability must not be so strong that an applied write magnetic field cannot successfully write to the MRAM cell

Method used

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  • Method of providing stability of a magnetic memory cell
  • Method of providing stability of a magnetic memory cell
  • Method of providing stability of a magnetic memory cell

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Embodiment Construction

[0027] As shown in the drawings for illustrative purposes, the present invention embodies an apparatus and method for providing stability to a memory cell located proximate to a write line capable of setting the magnetic state of the memory cell.

[0028] attached image 3 Shown are curves of the applied magnetic field strength used to change states of an MRAM memory cell having a specific shape. The first coordinate axis is the Hx coordinate axis, and the second coordinate axis is the Hy coordinate axis. A magnetic memory unit can usually be physically represented by an X-axis and a Y-axis. As discussed next, in general, the X-axis of the depicted MRAM memory cell corresponds to the longest cross-sectional dimension of the MRAM memory cell. Generally, the longest cross-sectional dimension of an MRAM memory cell corresponds to the most stable magnetic orientation of the MRAM memory cell. Therefore, the X-axis of an MRAM memory cell is usually the most stable magnetic orienta...

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Abstract

In a method of providing the magnetic stability of a memory cell 612, generally, the memory cell 612 is located in the vicinity of a conductive line 614 and is arranged in the vicinity of a write mechanism that can set a magnetic state of the memory cell 612. This method includes receiving a presentation of a maximum magnetic field intensity available from the write mechanism. In order to provide the stability of the memory cell 612, desirable placement of the memory cell 612 relative to the conductive line can be generated, while still allowing the write mechanism to change the magnetic state of the memory cell 612.

Description

technical field [0001] The present invention generally relates to electronic memory. More particularly, the present invention relates to a method of providing stability to magnetic memory cells. Background technique [0002] Nonvolatile memory is memory whose contents are retained even if the power supply connected to the memory is turned off. Magnetic Random Access Memory (MRAM) is one type of non-volatile memory. MRAM involves storing a logic state, or bit, by setting the orientation of the magnetic field of the MRAM cell inside the MRAM. This magnetic field orientation is maintained even when the power to the MRAM cell is turned off. [0003] FIG. 1 shows an MRAM cell 100 . The MRAM memory cell 100 includes a soft magnetic region 120 , a dielectric region 130 and a hard magnetic region 110 . The magnetization orientation in the soft magnetic region 120 is not fixed, and can exhibit two stable orientations as indicated by the arrow M1. The hard magnetic region 110 (a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105G11C11/00G11C11/15G11C11/16H01L21/8246H01L43/00H01L43/08
CPCG11C11/16
Inventor M·沙马M·K·巴塔查亚
Owner SAMSUNG ELECTRONICS CO LTD