A shallow trench isolation approach for improved STI corner rounding
A technology of shallow trench isolation and rounding, which is used in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc. to increase performance and reduce leakage.
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[0011] The present invention relates to a method of performing trench isolation during semiconductor component manufacturing. The following descriptions will enable those skilled in the art to make and use the present invention, and provide the contents of the patent application and its description. The various modifications of the preferred embodiment and the general principles and features described therein are easily understood by those skilled in the art. Therefore, the present invention is not intended to be limited by the illustrated embodiments. On the contrary, the present invention will conform to the broadest scope according to the principles and features described therein.
[0012] The present invention provides a method for performing shallow trench isolation to improve STI corner rounding in semiconductor devices. After the shallow trench is etched into the substrate, the process includes performing a dual substrate oxidation process before the STI is filled. Then, a ...
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